Bismuth ferric/bismuth titanate laminated construction electric capacity and method for preparing the same

A laminated structure, bismuth titanate technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as poor capacitance characteristics and affect capacitance performance, and achieve low power consumption, low preparation temperature, and excellent resistance. Effects of fatigue properties

Inactive Publication Date: 2008-03-05
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Tokyo Institute of Technology developed a bismuth ferrite (BiFeO 3 , abbreviated as BFO) material capacitance, the test proves that it has extremely high remnant polarization strength at low temperature, but at room temperature, this BFO material has a large leakage, which greatly affects the capacitance performance
Therefore, the researchers then doped it again, and developed a BFO material doped with manganese, and obtained a high remnant polarization at room temperature, but the capacitance of the existing BFO material is lower than that at room temperature. Poor characteristics

Method used

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  • Bismuth ferric/bismuth titanate laminated construction electric capacity and method for preparing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] BXT in the capacitor of the present embodiment is neodymium-doped bismuth titanate Bi 4-x Nd x Ti 3 o 12 , its chemical composition and components are: Bi 3.15 Nd 0.85 Ti 3 o 12 (i.e. BNT), x in said Nd is 0.85; Bi in said neodymium-doped bismuth titanate, relative to said composition formula Bi 3.15 Nd 0.85 Ti 3 o 12 The content of Bi should be added in excess, and the excess percentage of the Bi element is 20% of the total amount of each element; the thickness of the BNT film is 10nm, and the thickness of the BFO film is 100nm. Specific steps are as follows:

[0048] 1) Prepare the BNT precursor sol:

[0049] 11) Dissolving 1.366g neodymium acetate (commercially available product) in 10ml ethanolamine (commercially available product) is mixed with completely dissolved neodymium acetate solution;

[0050] 12) Dissolving 15.422g bismuth hexanoate (commercially available product) in 25ml hexanoic acid (commercially available product) is made into completely d...

Embodiment 2

[0078] BXT in the capacitor of the present embodiment is neodymium-doped bismuth titanate Bi 4-x Nd x Ti 3 o 12 , its chemical composition and components are: Bi 3.15 Nd 0.85 Ti 3 o 12 (i.e. BNT), x in said Nd is 0.85; Bi in said neodymium-doped bismuth titanate, relative to said composition formula Bi 3.15 Nd 0.85 Ti 3 o 12 The content of Bi should be added in excess, and the excess percentage of the Bi element is 20% of the total amount of each element; the thickness of the BNT film is 20nm, and the thickness of the BFO film is 200nm. Specific steps are as follows:

[0079] 1) Prepare the BNT precursor sol:

[0080] 11) Dissolving 1.366g neodymium acetate (commercially available product) in 10ml ethanolamine (commercially available product) is mixed with completely dissolved neodymium acetate solution;

[0081]12) Dissolve 11.712g of bismuth nitrate (commercially available product) in 50ml of acetic acid (commercially available product), add 10ml of ethanolamine,...

Embodiment 3

[0109] BXT in the capacitor of the present embodiment is neodymium-doped bismuth titanate Bi 4-x Nd x Ti 3 o 12 , its chemical composition and components are: Bi 3.15 Nd 0.85 Ti 3 o 12 (i.e. BNT), x in said Nd is 0.85; Bi in said neodymium-doped bismuth titanate, relative to said composition formula Bi 3.15 Nd 0.85 Ti 3 o 12 The content of Bi should be added in excess, and the excess percentage of the Bi element is 20% of the total amount of each element; the thickness of the BNT film is 50nm, and the thickness of the BFO film is 300nm. Specific steps are as follows:

[0110] 1) Prepare the BNT precursor sol:

[0111] 11) Dissolving 1.366g neodymium acetate (commercially available product) in 10ml ethanolamine (commercially available product) is mixed with completely dissolved neodymium acetate solution;

[0112] 12) Dissolve 9.394 bismuth acetate (commercially available product) in 40ml of glacial acetic acid (commercially available product), and fully stir at 80°...

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Abstract

This invention relates to a BFO/BXT laminated capacitor and its preparing method, in which, the capacitor includes: a substrate made of silicon and orderly combined with an oxidation layer, a lower electrode metal layer, a BFO film and an upper metal layer, in which, a BXT induction film is set between the lower electrode metal layer and the BFO film. The method includes: preparation of sol of RFO and BXT precursors and preparation of the capacitor of its laminated structure and the ferroelectric capacitor prepared with this method includes excellent property of anti-fatigue, high residual polarized intensity, low operational voltage and better dielectric property.

Description

technical field [0001] The invention belongs to the technical field of new microelectronic materials and devices, in particular to bismuth ferrite (BiFeO) suitable for novel high-density memories and integrated ferroelectric devices. 3 , abbreviated as BFO) / bismuth titanate (Bi 4-x x x Ti 3 o 12 , abbreviated as BXT) stacked structure capacitor preparation method. Background technique [0002] With the development of the microelectronics industry, higher requirements are put forward for the memory, such as: high speed, low power consumption, high security and non-volatile. Traditional SRAM, DRAM, E 2 PROM, FLASH and other memories all use silicon as the storage medium. Due to the limitations of physics and technology, they can no longer meet the further rapid development of the information industry. Therefore, new storage media must be sought and developed. Ferroelectric materials are a class of dielectric materials that have the characteristic of spontaneous polariza...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/04H01L27/115H01L21/02H01L21/822H01L21/8247
Inventor 谢丹任天令臧永圆刘理天
Owner TSINGHUA UNIV
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