Bismuth ferric/bismuth titanate laminated construction electric capacity and method for preparing the same

Abstract

This invention relates to a BFO / BXT laminated capacitor and its preparing method, in which, the capacitor includes: a substrate made of silicon and orderly combined with an oxidation layer, a lower electrode metal layer, a BFO film and an upper metal layer, in which, a BXT induction film is set between the lower electrode metal layer and the BFO film. The method includes: preparation of sol of RFO and BXT precursors and preparation of the capacitor of its laminated structure and the ferroelectric capacitor prepared with this method includes excellent property of anti-fatigue, high residual polarized intensity, low operational voltage and better dielectric property.

Description

technical field

[0001] The invention belongs to the technical field of new microelectronic materials and devices, in particular to bismuth ferrite (BiFeO) suitable for novel high-density memories and integrated ferroelectric devices. 3 , abbreviated as BFO) / bismuth titanate (Bi 4-x x x Ti 3 o 12 , abbreviated as BXT) stacked structure capacitor preparation method. Background technique

[0002] With the development of the microelectronics industry, higher requirements are put forward for the memory, such as: high speed, low power consumption, high security and non-volatile. Traditional SRAM, DRAM, E 2 PROM, FLASH and other memories all use silicon as the storage medium. Due to the limitations of physics and technology, they can no longer meet the further rapid development of the information industry. Therefore, new storage media must be sought and developed. Ferroelectric materials are a class of dielectric materials that have the characteristic of spontaneous polariza...

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