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A kind of preparation method of metal oxide nanobelt

A technology of oxides and nanobelts, applied in the direction of chromium oxide/hydrate, titanium oxide/hydroxide, titanium dioxide, etc., can solve the problems of high cost, high preparation temperature, complex process, etc., and achieve low cost and low preparation temperature , The effect of simple process

Inactive Publication Date: 2016-09-14
HENAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation method of this metal oxide nanobelt has the disadvantages of complex process, high preparation temperature and high cost, and the prepared metal oxide nanobelt is a single crystal

Method used

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  • A kind of preparation method of metal oxide nanobelt
  • A kind of preparation method of metal oxide nanobelt
  • A kind of preparation method of metal oxide nanobelt

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Prepare an oxalic acid solution with a concentration of 5%. Weigh 5g of solid oxalic acid with an electronic balance and put it into a small beaker, then measure 95ml of deionized water into the beaker, and stir with a glass rod until the solid disappears.

[0022] Cleaning of monocrystalline silicon wafers: Put the cut monocrystalline silicon wafers into a beaker, add acetone, ultrasonically clean them for 5 minutes, take them out, rinse them with absolute alcohol, and let them dry naturally.

[0023] To grow oxalic acid templates on monocrystalline silicon wafers: take a reaction vessel of appropriate size, pour the prepared oxalic acid solution with a mass concentration of 5%, put the cleaned and dried monocrystalline silicon wafers into the oxalic acid solution, and after 10 minutes Take it out, let it dry naturally, and you can get strips of oxalic acid on the single crystal silicon wafer. Put the oxalic acid powder on the monocrystalline silicon wafer, observe the...

Embodiment 2

[0027] Preparation of oxalic acid solution: use alcohol as a solvent to prepare an alcohol solution of oxalic acid with a concentration of 10%.

[0028] Cleaning the single crystal alumina substrate: Put the cut single crystal alumina sheet into a beaker, add acetone, ultrasonically clean it for 5 minutes, take it out, rinse it with absolute alcohol, and let it dry naturally.

[0029] To grow oxalic acid template on the single crystal alumina substrate: take a reaction vessel of appropriate size, pour the prepared oxalic acid solution with a mass concentration of 10%, put the cleaned and dried single crystal alumina sheet into the oxalic acid solution, 1 Take it out after 1 hour, let it dry naturally, and you can get strip-shaped oxalic acid on the single crystal alumina substrate.

[0030] Zinc coating on the oxalic acid template: the oxalic acid template grown on the single crystal alumina substrate is sprayed with zinc by magnetron sputtering for 60 seconds under vacuum. T...

Embodiment 3

[0033] Preparation of citric acid solution: look up the solubility data of citric acid, and prepare a supersaturated solution of citric acid at room temperature with deionized water.

[0034] Cleaning of monocrystalline silicon wafers: Put the cut monocrystalline silicon wafers into a beaker, add acetone, ultrasonically clean them for 5 minutes, take them out, rinse them with absolute alcohol, and let them dry naturally.

[0035] To grow a citric acid strip template on a single crystal silicon wafer: take a reaction vessel of an appropriate size, pour the prepared citric acid supersaturated solution into it, put the cleaned and dried single crystal silicon wafer into the citric acid supersaturated solution, Take it out after 5 days, let it dry naturally, and you can get strip-shaped citric acid on the monocrystalline silicon wafer.

[0036] Copper coating on the citric acid template grown on the single crystal silicon wafer: Spray the strip-shaped citric acid template grown on...

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Abstract

The invention provides a preparation method of a metal oxide nanobelt and relates to the technical field of nanomaterial preparation. The preparation method comprises the following steps: firstly, crystallizing on a crystallization substrate such as a monocrystalline silicon piece or a monocrystalline alumina piece by use of a template solution such as oxalic acid to generate a strip-shaped template; secondly, plating a metal on the strip-shaped template by use of a vacuum coating process, and then dissolving and removing the strip-shaped template by use of a solvent to obtain an independent metal nanobelt; and finally, performing oxidization treatment on the metal nanobelt in an oxygen-containing atmosphere, thereby obtaining the metal oxide nanobelt. The metal oxide nanobelt prepared by use of the preparation method is controllable in thickness; and the preparation process is simple, low in temperature required, low in equipment cost, and low in cost.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a method for preparing metal oxide nanobelts. Background technique [0002] One-dimensional metal oxide nanostructures, such as nanowires, nanorods, nanotubes or nanoribbons, are key components for fabricating nanodevices. In particular, nanoribbons can be used to prepare functional devices along the nanoribbon direction, such as preparing field-effect transistors to study the semiconductor properties and gas sensor properties of nano-metal oxides. [0003] Semiconductor metal oxide nanobelts of zinc, tin, indium, and cadmium have been successfully synthesized by evaporating metal oxide powders at high temperature. The nanoribbons are 30 to 300 nanometers wide, 50 to 30 nanometers thick, and several millimeters long. The preparation method of the metal oxide nanobelt has disadvantages such as complex process, high preparation temperature and high cost, and the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G23/047C01G9/03C01G3/02C01G37/02C01G53/04B82Y30/00
Inventor 任凤章刘玉亮敖宁赵旭吴文斌徐申生王俊鹏徐春花
Owner HENAN UNIV OF SCI & TECH
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