Substrate Treating Apparatus and Method

A technology of a substrate processing device and a processing method, which is applied in the directions of discharge tubes, electrical components, plasma, etc., can solve the problems of uneven plasma supply, uneven substrate processing process, etc., and achieve the effect of uniform plasma density

Inactive Publication Date: 2015-05-27
PSK INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This results in the plasma being supplied unevenly between the central and edge regions of the substrate
Therefore, this leads to non-uniformity in substrate processing processes such as ashing and etching

Method used

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  • Substrate Treating Apparatus and Method
  • Substrate Treating Apparatus and Method
  • Substrate Treating Apparatus and Method

Examples

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Embodiment Construction

[0028] Hereinafter, preferred embodiments of the present invention will hereinafter be described in more detail with reference to the accompanying drawings. Embodiments of the invention may be embodied in different forms and should not be construed as limited to only the embodiments set forth herein. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Accordingly, the shapes of elements shown in the figures are exaggerated for clarity.

[0029] The substrate 10 of the embodiment of the present invention may be a semiconductor wafer, but is not limited thereto. Therefore, the substrate 10 may be a different kind of substrate such as a glass substrate or the like.

[0030] Also, in one embodiment of the present invention, the substrate processing apparatus may be an apparatus that performs processes such as ashing, deposition, or etching using plasma.

[0031] A s...

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Abstract

Provided is a substrate treating apparatus including a first supplying unit, a second supplying unit, a first source, a second source, a gas separation member or the like. Plasma generated from a first gas supplied from a first supplying unit by the first source is used for treating a central area of a substrate. Plasma generated from a second gas supplied from a second supplying unit by the second source is used for treating an edge area of the substrate. A gas separation member prevents plasmas generated respectively from first and second gases from being mixed up.

Description

technical field [0001] The present invention relates to a substrate processing device and method, in particular to a substrate processing device and method using plasma. Background technique [0002] Substrate Substrate Fabrication of semiconductor elements requires multiple processing steps such as deposition, photolithography, etching, ashing, cleaning and polishing. Many processes, such as deposition, etching, and ashing, utilize plasmas to treat semiconductor substrates, such as wafers. [0003] In general, a substrate processing apparatus using plasma allows gas injected into a plasma generator through a gas supply member to spread throughout the generator to generate plasma. Plasma generated from the plasma generator is supplied to a processing chamber in which a substrate processing process is performed. The plasma provided to the processing chamber is provided to the substrate surface through baffles in the processing chamber. This results in the plasma being supp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32H01L21/265
CPCH01J37/321H01J37/32357H01J37/3244H01J37/32449H01J37/32458H01J37/32715H01J2237/3321H01J2237/334
Inventor 蔡熙善赵政熙李鍾植李韩生金贤峻
Owner PSK INC
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