Check patentability & draft patents in minutes with Patsnap Eureka AI!

Semiconductor structure

A technology of semiconductor and composite structure, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve the problems of increasing manufacturing costs of semiconductor structures

Inactive Publication Date: 2015-05-27
UNITED MICROELECTRONICS CORP
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there have been many structural improvements to improve the characteristics of semiconductor components, but they usually require additional photomasks and process methods, which increases the manufacturing cost of semiconductor structures

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure
  • Semiconductor structure
  • Semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The same reference numerals in the drawings are used to designate the same or similar parts. It should be noted that the illustrations are simplified to clearly illustrate the content of the embodiments, and the size ratios on the illustrations are not drawn in the same proportion as actual products, so they are not used to limit the protection scope of the present invention.

[0026] figure 1 A partial schematic diagram of a semiconductor structure 1 according to an embodiment of the present invention is shown. In this embodiment, the semiconductor structure 1 is, for example, a laterally diffused metal oxide semiconductor (LDMOS) structure. The semiconductor structure 1 of the embodiment includes a substrate 10 , a deep well (deep well, DW) 11 , a first well 13 , a second well 14 , a gate 15 , a first insulator 17 and a second insulator 18 . The subst...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Depthaaaaaaaaaa
Depthaaaaaaaaaa
Login to View More

Abstract

The invention discloses a semiconductor structure. The semiconductor structure comprises a substrate with a first conduction type, a deep well with a second conduction type, a first well with the first conduction type, a second well with the second conduction type, a grid electrode, a first insulator and a second insulator, wherein the deep well is formed inside the substrate and extends downwards from the surface of the substrate; the first well and the second well extend downwards from the surface of the substrate to be formed in the deep well; the first well is separated from the first well; the grid electrode is formed on the substrate and arranged between the first well and the second well; the first insulator extends downwards from the surface of the substrate and is formed between the grid electrode and the second well; the second insulator extends downwards from the surface of the substrate and is adjoined with the first well; the ratio of the depth of the first insulator to the depth of the second insulator is less than 1.

Description

technical field [0001] The present invention relates to a semiconductor structure, and in particular to a semiconductor structure having a first insulator and a second insulator, and the ratio of the depth of the first insulator to the depth of the second insulator is less than 1. Background technique [0002] With the development of the semiconductor industry, it has always been an important goal to continuously reduce the size of semiconductor structures while simultaneously improving speed, performance, density and reducing cost. High power components are often used as semiconductor components. On-resistance (Ron) is one of the key factors that dominate the performance of the entire semiconductor device. The lower the on-resistance, the lower the power loss of the entire component. [0003] In general semiconductor structures, lower on-resistance and higher breakdown voltage (breakdown voltage, BVD) are required. At present, there are many structural improvements to im...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/0653H01L29/0878H01L29/1083H01L29/7816
Inventor 李秋德许茗舜林克峰王智充廖宣博黄世腾林淑雯蔡素华萧世楹
Owner UNITED MICROELECTRONICS CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com