Substrate processing apparatus, substrate processing method, and manufacturing method of semiconductor device
A substrate processing device and a technology for substrates, which are applied in semiconductor/solid-state device manufacturing, electrical components, coatings, etc., can solve problems such as difficulties, and achieve the effects of suppressing by-products and improving in-plane uniformity
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no. 1 approach
[0095] Figure 7 It is a figure which shows the flow of the film-forming process of the TiN film concerning 1st Embodiment of this invention. Figure 8 It is a diagram showing the timing of gas supply in the TiN film forming step according to the first embodiment of the present invention. Figure 12 It is a schematic diagram for explaining the state of the wafer surface in the TiN film forming step according to the embodiment of the present invention.
[0096] 4 Gas supply, step S202>
[0097] Open valve 244 and valve 248, make TiCl 4 The gas flows into the first gas introduction pipe 229a and the second gas introduction pipe 229b. The TiCl flowing in the first gas introduction pipe 229a and the second gas introduction pipe 229b 4 Gases are flow regulated by mass flow controllers 404, 408, respectively. TiCl after adjusted flow 4 The gas is supplied into the first buffer space 232a and the second buffer space 232b from the first gas introduction port 231a and the second ...
no. 2 approach
[0117] Figure 9 It is a diagram showing the timing of gas supply in the TiN film forming step according to the second embodiment of the present invention. In this embodiment, the only difference from the flow of the TiN film formation process in the above-mentioned first embodiment is that N 2 Supply timing of gas supply.
[0118] In this embodiment, with the TiCl of the above-mentioned first embodiment 4 Gas supply process (step S202), purge process (step S204), NH 3 Gas supply process (step S206), purge process (step S208), NH to the center of the wafer 3 The gas supply process (step S210) and the purge process (step S212) are the same, between each step S202 to step S212, the valves 246, 247, 250, 251 of the purge gas supply pipes 306, 307, 310, 311 are opened, N is always continuously supplied to the first gas introduction pipe 229a, the second gas introduction pipe 229b, the first buffer space 232a, the second buffer space 232b, and the processing space 201. 2 gas (...
no. 3 approach
[0120] Figure 10 It is a figure which shows the flow of the film-forming process of the TiN film concerning 3rd Embodiment of this invention. Figure 11 It is a diagram showing the timing of gas supply in the TiN film forming step according to the third embodiment of the present invention.
[0121] 4 Gas supply, step S302>
[0122] Open valve 244 and valve 248, make TiCl 4 The gas flows into the first gas introduction pipe 229a and the second gas introduction pipe 229b. The TiCl flowing in the first gas introduction pipe 229a and the second gas introduction pipe 229b 4 Gases are flow regulated by mass flow controllers 404, 408, respectively. TiCl after adjusted flow 4 The gas is supplied into the first buffer space 232a and the second buffer space 232b from the first gas introduction port 231a and the second gas introduction port 231b, respectively, and is supplied into the processing space 201 through the through holes 236a, 236b of the dispersion plate 234. , exhaust ...
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