SbSe-based nitrogen-doped nano-film material for PCRAM and preparation method for SbSe-based nitrogen-doped nano-film material

A technology of nano-film materials and phase-change memory, applied in the field of phase-change memory materials and their preparation, can solve the problems of memory data loss, negative effects on the human body and the environment, low crystallization temperature, etc., and achieves improved stability, fast crystallization speed, The effect of increasing storage speed

Inactive Publication Date: 2015-06-03
JIANGSU UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Although Ge 2 Sb 2 Te 5 It has outstanding performance in terms of thermal stability and reading and writing speed, but there are also serious problems: the crystallization temperature of the material is low, about 165°C; although based on Ge 2 Sb 2 Te 5 The memory data can be kept for 10 years at 85°C

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  • SbSe-based nitrogen-doped nano-film material for PCRAM and preparation method for SbSe-based nitrogen-doped nano-film material
  • SbSe-based nitrogen-doped nano-film material for PCRAM and preparation method for SbSe-based nitrogen-doped nano-film material
  • SbSe-based nitrogen-doped nano-film material for PCRAM and preparation method for SbSe-based nitrogen-doped nano-film material

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Embodiment 1）

[0022] The general formula of the chemical composition of the SbSe-based nitrogen-doped nano-film material used for phase-change memory in this embodiment is (Sb 70 Se 30 ) x N 1-x , where x=0.69~0.75 (x=0.7392 in this embodiment).

[0023] The SbSe-based nitrogen-doped nano-film material is prepared by magnetron sputtering; high-purity nitrogen and high-purity argon are introduced during preparation, and the total gas flow of nitrogen and argon is 30 sccm, wherein the flow of nitrogen gas is 1 sccm; The ejection pressure is 0.15 Pa to 0.35 Pa, and the specific preparation method includes the following steps:

[0024] ①Substrate cleaning, cleaning the surface and back of the substrate to remove dust particles, organic and inorganic impurities. Select SiO with a size of 5mm×5mm 2 / Si (100) substrate, first ultrasonically clean the substrate in acetone (a purity of 99% or more) in an ultrasonic cleaner for 3 to 5 minutes, take it out and rinse it with deionized water; then ...

Embodiment 2）

[0034] The chemical composition formula (Sb 70 Se 30 ) x N 1-x Among them, x=0.7255.

[0035] The rest of the preparation method are the same as in Example 1, the difference is: step 3. when high-purity argon and high-purity nitrogen are introduced into the sputtering chamber, the Ar gas flow rate is set to be 28 sccm, N 2 The flow rate is 2 sccm.

Embodiment 3）

[0037] The chemical composition formula (Sb 70 Se 30 ) x N 1-x Among them, x=0.7150.

[0038] The rest of the preparation method are the same as in Example 1, except that: step 3. when high-purity argon and high-purity nitrogen are introduced into the sputtering chamber, the Ar gas flow rate is set to be 27 sccm, and the N 2 The flow rate is 3 sccm.

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Abstract

The invention discloses a SbSe-based nitrogen-doped nano-film material for a PCRAM (Phase-Change Random Access Memory) and a preparation method for the SbSe-based nitrogen-doped nano-film material. The general formula of the chemical composition of the nano-film material is (Sb<70>Se<30>)<x>N<1-x>, wherein x is equal to 0.69-0.75. Compared with the conventional Ge2Sb2Te5 phase-change film material, the SbSe-based nitrogen-doped nano-film material for the PCRAM disclosed by the invention is higher in crystallization speed; the storage speed of PCRAM can be greatly improved; meanwhile, the film material disclosed by the invention is higher in crystallization temperature and activation energy, so that the stability of the PCRAM can be greatly improved. The content of nitrogen in the SbSe-based nitrogen-doped nano-film material is controlled by controlling the flow rate of the introduced nitrogen when magnetron sputtering is performed, so that the content of the nitrogen can be controlled accurately.

Description

technical field [0001] The invention relates to a phase-change memory material in the field of microelectronics technology and a preparation method thereof, in particular to a SbSe-based nitrogen-doped nanometer film material used for a phase-change memory and a preparation method thereof. Background technique [0002] The storage medium of Phase-Change Random Access Memory (PCRAM) is a phase-change material based on chalcogenide compounds. The writing and erasing of information is realized by switching between states (high resistance), and the reading of information is realized by measuring the change of resistance. Because phase change memory has the advantages of fast reading speed, strong stability, low power consumption, high storage density, and compatibility with traditional CMOS technology, information functional materials have become a research hotspot. [0003] At present, the most researched and used phase change materials are Ge-Sb-Te ternary alloys, especially ...

Claims

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Application Information

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IPC IPC(8): H01L45/00
Inventor 吴卫华胡益丰朱小芹眭永兴袁丽薛建忠郑龙邹华
Owner JIANGSU UNIV OF TECH
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