Dual optical path device for connecting pulse laser with terminal experiment cavity
A pulsed laser, dual optical path technology, applied in lasers, laser parts, phonon exciters, etc., can solve the problem of low laser use efficiency, and achieve the effect of low design cost, easy implementation, and improved use efficiency
Inactive Publication Date: 2015-06-10
UNIV OF SCI & TECH OF CHINA
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Problems solved by technology
Usually a laser is equipped with a set of terminal equipment, but some lasers have two or more light outlets, and the efficiency of the laser is not high
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[0021] figure 1 It is a functional block diagram of the present invention. Usually, the laser light generated by the pulsed laser 11 will go through the optical path to the experimental terminal such as the thin film deposition system 13 or the vacuum glove box 14 . But our laser has three light outlets, and can generate laser light of at least two wavelengths at the same time. The current optical system only connects a pulsed laser 11 with a thin film deposition system 13, and only one light outlet of the pulsed laser can be used. The design does not make efficient use of pulsed lasers. We designed a set of dual optical path device 12 which can organically combine the pulsed laser 11 with the thin film deposition system 13 and the vacuum glove box 14 . The lasers with wavelengths of 1064nm and 532nm generated from the pulsed laser reach different terminal systems through different optical paths. We can use two lasers that do not interfere with each other to complete differ...
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The invention discloses a dual optical path device for connecting a pulse laser with a terminal experiment cavity. The dual optical path device (12) for connecting the pulse laser (11) with the terminal experiment cavity connects the pulse laser (11), a thin film deposition system (13) and a vacuum glove box (14). The pulse laser (11) is of a PRO-320Nd: YAG type. The dual optical path device (12) for connecting the pulse laser (11) with the terminal experiment cavity is composed of seven dielectric film reflectors, a focusing mirror, and corresponding mirror brackets and optical path protection devices. Two optical paths of the dual optical path device (12) for connecting the pulse laser (11) with the terminal experiment cavity are respectively corresponding to lasers 1064nm and 532nm in wavelength, wherein the invisible infrared light 1064nm in wavelength respectively passes through three optional dielectric film reflectors and the focusing mirror, and then reaches a reaction furnace, and the green light 532nm in wavelength can pass through the other four dielectric film reflectors, and then reaches a thin film deposition cavity. The dual optical path device (12) for connecting the pulse laser (11) with the terminal experiment cavity overcomes deficiencies in the prior art, and is simple in structure and low in cost. The dual optical path device (12) for connecting the pulse laser (11) with the terminal experiment cavity can integrate one laser with a plurality of different experiment terminals, and greatly improves experimental research and social production efficiency.
Description
technical field [0001] The invention belongs to the field of semiconductor science and technology, and in particular relates to a dual optical path device capable of effectively connecting a pulsed laser with various terminal experimental cavities (such as a thin film deposition system and a vacuum glove box). Background technique [0002] Lasers can work in continuous or pulsed modes. When the rate of light pulses is less than the cavity lifetime of the laser, it is called a pulsed laser. The laser generated by this laser has the advantages of high power, high stability, low emittance, etc., and it will release huge energy in an instant, making the metal material evaporate locally. In the semiconductor industry, pulsed lasers are often used to grow thin film materials. First, the high power of the laser is used to sputter the metal material into a plasma state, and then these plasma plumes are deposited on the substrate to form thin film materials such as semiconductors; in...
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Login to View More IPC IPC(8): H01S3/10H01S3/109G01N21/63
Inventor 孔帅吴喜波穆克军吴鹏孙喆张国斌
Owner UNIV OF SCI & TECH OF CHINA