Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and apparatus for short circuit protection of power semiconductor switch

A technology of power semiconductors and switches, applied in the field of short-circuit protection, can solve problems such as difficulty and complicated maintenance, and achieve the effect of saving cost, saving maintenance time, and minimizing the risk of mechanical damage

Inactive Publication Date: 2015-06-10
ABB (SCHWEIZ) AG
View PDF3 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Implementation of any of the above methods can result in additional expense in material, development and manufacturing costs, making maintenance more complex and difficult

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and apparatus for short circuit protection of power semiconductor switch
  • Method and apparatus for short circuit protection of power semiconductor switch
  • Method and apparatus for short circuit protection of power semiconductor switch

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The present disclosure proposes a short circuit protection method for a power semiconductor switch, wherein the current through the switch is responsive to the control terminal voltage at the control terminal of the switch. The control terminal voltage can be driven by the driver unit. For example, the control terminal voltage may be a gate-emitter voltage of an IGBT or a MOSFET, and the control terminal may be a gate switch. At this time, the driver unit may be a gate driver unit.

[0024] Furthermore, the present disclosure proposes an apparatus for implementing the above method.

[0025] The method may include detecting a short circuit through indirect current estimation. For example, the current may be estimated based on the bond voltage, ie, the voltage across the stray inductance formed by die bonding of the switch. Short circuits can be detected by comparing the estimated current to the short circuit current limit.

[0026] Then, the control terminal voltage ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present disclosure presents a method, and an apparatus implementing the method, for a power semiconductor switch, wherein a current through the switch is responsive to a control terminal voltage at a control terminal of the switch, and the control terminal voltage is driven by a driver unit, The method comprises estimating the current on the basis of a bond voltage of the switch, detecting a short circuit by comparing the estimated current to a short circuit current limit, controlling an on-state voltage level of the control terminal voltage on the basis of the comparison in order to limit the current through the switch during the short circuit, and controlling the control terminal voltage to an off-state voltage level in order to turn the switch off. The on-state voltage level voltage is controlled by pulse-width modulating the output of the driver unit. A switching frequency of the modulation is at least the cut-off frequency of low-pass characteristics of the control terminal.

Description

technical field [0001] The invention relates to short-circuit protection of power semiconductor switches. Background technique [0002] Power converters are used in a wide variety of applications. Power converters typically include one or more semiconductor switches used to convert power from one form to another. For example, a DC voltage can be converted to an AC voltage. [0003] To perform a conversion, each switch in a power converter is typically controlled in one of two states: an on state (ie, a conducting state) and an off state (ie, a non-conducting state). Therefore, herein, turning on a switch refers to setting the switch to an on state. Correspondingly, opening a switch refers to setting the switch to an open state. [0004] Applications using electrical power converters, especially high power applications, often require high operational reliability. Therefore, fault protection of semiconductors in power converters is an important part of the converter prote...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/08
CPCH03K17/0822H02H3/08
Inventor 罗德里戈·阿隆索·阿尔瓦雷斯瓦伦祖埃拉伊格纳西奥·利扎马斯特芬·贝尔内特马蒂·莱蒂宁
Owner ABB (SCHWEIZ) AG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products