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Piezoelectric ceramics with bismuth layered structure, preparation method thereof and method for improving high temperature resistivity of bismuth layered piezoelectric ceramics

A piezoelectric ceramic, high resistivity technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve problems such as performance defects, optimize dielectric and piezoelectric properties, improve The effect of high temperature resistivity

Active Publication Date: 2017-05-03
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to overcome the performance defects of existing bismuth layered structure piezoelectric ceramic materials under high temperature conditions, and the invention provides a bismuth layered structure piezoelectric ceramic and its preparation method

Method used

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  • Piezoelectric ceramics with bismuth layered structure, preparation method thereof and method for improving high temperature resistivity of bismuth layered piezoelectric ceramics
  • Piezoelectric ceramics with bismuth layered structure, preparation method thereof and method for improving high temperature resistivity of bismuth layered piezoelectric ceramics
  • Piezoelectric ceramics with bismuth layered structure, preparation method thereof and method for improving high temperature resistivity of bismuth layered piezoelectric ceramics

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Experimental program
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Embodiment 1

[0030] Al was prepared by solid-state reaction method 2 o 3 doped bismuth layered Na 0.5 Bi 2.5 Nb2 o 9 Piezoelectric Ceramics. Among them, Al 2 o 3 The purity of the powder raw material is 99.95%, and its addition amount is Na 0.5 Bi 2.5 Nb 2 o 9 1.0% of the weight of piezoelectric ceramic powder, added in the form of Na after synthesis 0.5 Bi 2.5 Nb 2 o 9 The powders are finely ground together, then formed and sintered (sintering temperature 1150°C, sintering time 2 hours, heating rate 3°C / min) and other processes.

Embodiment 2

[0032] Al was prepared by solid-state reaction method 2 o 3 doped bismuth layered Na 0.5 Bi 2.5 Nb 2 o 9 Piezoelectric Ceramics. Among them, Al 2 o 3 The purity of the powder raw material is 99.95%, and its addition amount is Na 0.5 Bi 2.5 Nb 2 o 9 3.0% of the weight of piezoelectric ceramic powder, added in the form of Na after synthesis 0.5 Bi 2.5 Nb 2 o 9 The powders are finely ground together, then formed and sintered (sintering temperature 1150°C, sintering time 2 hours, heating rate 3°C / min) and other processes.

Embodiment 3

[0034] Al was prepared by solid-state reaction method 2 o 3 doped bismuth layered Na 0.5 Bi 2.5 Nb 2 o 9 Piezoelectric Ceramics. Among them, Al 2 o 3 The purity of the powder raw material is 99.95%, and its addition amount is Na 0.5 Bi 2.5 Nb 2 o 9 5.0% of the weight of piezoelectric ceramic powder, added in the form of Na after synthesis 0.5 Bi 2.5 Nb 2 o 9 The powders are finely ground together, then formed and sintered (sintering temperature 1160°C, sintering time 2 hours, heating rate 3°C / min) and other processes.

[0035] image 3 for different Al 2 o 3 Doping modified Na 0.5 Bi 2.5 Nb 2 o 9 From the natural surface morphology of ceramics, it can be seen that the second phase is formed at the grain boundary, which plays a role in filling the voids and pores. Density; on the other hand, these second-phase particles at the grain boundaries also have the effect of hindering the current channel, which is beneficial to increase the resistivity.

[0036] ...

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Abstract

The invention relates to a bismuth layered structure piezoelectric ceramic and a preparation method thereof, as well as a method for improving the high temperature resistivity of the bismuth layered structure piezoelectric ceramic. The bismuth layered structure piezoelectric ceramic includes a main phase and a second phase with high insulation. Resistive oxide powder particles, wherein the main phase includes Na0.5Bi2.5Nb2O9, Bi3TiNbO9, CaBi2Nb2O9 and / or Bi4Ti3O12, and the weight ratio of the second phase to the main phase is ≤10%, preferably between 1 and 5%. Using the new method proposed by the present invention, the second phase is formed at the grain boundary and the microstructure is controlled through oxide doping, which can effectively improve the high-temperature resistivity of the bismuth layered structure piezoelectric ceramic while simultaneously optimizing its dielectric and piezoelectric properties. The electrical properties provide a new way to prepare bismuth layered structure piezoelectric ceramics that meet the requirements of high-temperature piezoelectric vibration sensors.

Description

technical field [0001] The invention belongs to the field of preparation of piezoelectric ceramic materials, and relates to a bismuth layered structure piezoelectric ceramic with high resistivity at high temperature and a preparation method thereof. Background technique [0002] Piezoelectric ceramic materials are extremely important functional materials to realize electromechanical energy conversion and coupling, and are widely used in aerospace, electronic information, energy, advanced manufacturing, medical systems, and weaponry. In recent years, my country has developed rapidly in the fields of aerospace, energy, medical and space technology, and has put forward increasingly stringent requirements for key functional components. A common feature of piezoelectric devices used in some important fields, such as acoustic logging tools, ultrasonic motors, and high-temperature piezoelectric vibration sensors, is the high temperature of the working environment, which requires pi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/187C04B35/495C04B35/468C04B35/622H10N30/853
Inventor 周志勇李玉臣董显林
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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