Monitoring method for heating lamp

Abstract

The invention provides a monitoring method for a heating lamp. The monitoring method comprises the following steps: step S1, collecting output current values which correspond one by one of the heating lamp under a plurality of output power percentages under the condition that the maximum output power is output by the heating lamp, and setting a standard current value of the corresponding output power percentage according to the output current value; step S2, in a technological process of an executing process formula, detecting a current output current value of the heating lamp under the current pre-set output power percentage condition, and inquiring a standard current value corresponding to the current pre-set output power percentage; comparing the current output current value with the standard current value; if the two values have the difference, entering the step S3; and step S3, maintaining the heating lamp. According to the monitoring method for the heating lamp, whether the output power of the heating lamp is reduced or not can be monitored in time, so that the heating lamp can be maintained in time, and a substrate can be stably heated by the heating lamp, and furthermore, the process quality can be improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor equipment manufacturing, and in particular relates to a monitoring method for a heating lamp. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology is a commonly used processing technology in the field of microelectronics. In the integrated circuit manufacturing industry, it refers to magnetron sputtering technology, which is mainly used for the deposition of metal films such as aluminum and copper. , to obtain metal contacts, metal interconnect lines, etc. [0003] Generally, PVD equipment includes a degassing chamber, a pre-cleaning chamber and a process chamber, wherein the degassing chamber is mainly used to complete the degassing process on the substrate, specifically, to heat the substrate to about 300°C to 350°C , to remove moisture and other volatile impurities on the surface of the substrate. In the degassing...

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Problems solved by technology

[0005] However, the following problems will inevitably exist in practical applications using the above method: because it is time-consuming to monitor the heating lamp by artificial means for collection, comparison and analysis, the output power reduction of the heating lamp cannot be monitored in time , so that the temperature of the substrate heated by the heating lamp cannot meet the preset value, resulting in poor degassing effect

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