Heavy ion testing data based device proton overturning cross section retrieving method

Abstract

The invention relates to a heavy ion testing data based device proton overturning cross section retrieving method. The method comprises the following steps that proton energy is confirmed; the material type and the thickness of a metal wiring layer and an oxidation layer of a device are confirmed; materials and the thickness of a sensitive area of the device are confirmed; an energy deposition differential spectrum of a proton in the sensitive area is analyzed; the energy deposition differential spectrum in the sensitive area is converted into an equivalent LET differential spectrum; the overturning cross section of the device under the proton irradiation is calculated. The influence of the nuclear reaction in the metal wiring layer and the oxidation layer of the device is considered, the method is more suitable for a device under a modern technological condition, the calculation of the influence exerted on the proton by the device is more accurate, and the reliability is greatly enhanced.

Description

technical field [0001] The invention relates to a method for analyzing the flipped section of a device under proton irradiation by utilizing the flipped section test data obtained by the device under heavy ion irradiation of an accelerator, and belongs to the technical field of aerospace single event effects. Background technique [0002] There are high-energy heavy ions and high-energy protons in the satellite operating space, both of which will produce single event effects in semiconductor devices. In order to ensure the reliable and stable operation of satellites in orbit, devices must be designed for single event effect protection. The flip section parameters of the device under the irradiation of heavy ions and protons are the input for the single event effect protection design. [0003] The heavy ion turnover cross-section parameters can be obtained through ground accelerator experiments. Although the proton turnover cross-section parameters can be obtained through ac...

AI Technical Summary

Problems solved by technology

Although the proton turnover cross-section parameters can be obtained through accelerator experiments, there are several disadvantages in proton single-event experiments: (1) the device irradiated by protons will be activated to produce radioactivity; (2) protons will produce single-event effects in devices Low cross section, high proton fluence required to obtain a statistically significant number of single event events, which introduces a total dose effect on the device

[0004] Based on the above reasons, the most commonly used method to calculate the proton turnover cross section of a device is to use the heavy ion single event turnover test data to calculate the proton single event turnover rate. This method has the following shortcomings: the influence of nuclear reactions in the metal wiring layer and oxide layer of the device is not considered The principle of protons producing single event effects is to produce secondary heavy charged particles through nuclear reaction with materials, and the secondary particles deposit energy in the sensitive area to cause single event effects, and the secondary particles produced by protons in the metal wiring layer and oxide layer , when the range is large enough, energy will also be deposited in the sensitive area, especially under the conditions of modern device technology, the number of metal wiring layers and oxide layers are increasing, and the probability of nuclear reaction of protons in metal wiring layers and oxide layers is getting larger and has a larger impact on the proton single event effect and should be taken into account

Images