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Fin-type field effect transistor forming method

A fin-type field effect and transistor technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems affecting FinFET performance and achieve the effect of avoiding adverse effects

Active Publication Date: 2015-06-24
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
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Problems solved by technology

In the subsequent process of Fin FET fabrication, the residue 21 will affect the structure and quality of the gate dielectric layer formed on the surface of the fin 3, thereby affecting the performance of the finally formed Fin FET

Method used

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  • Fin-type field effect transistor forming method
  • Fin-type field effect transistor forming method
  • Fin-type field effect transistor forming method

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Embodiment Construction

[0033] As mentioned in the background technology, during the fabrication of FinFETs, during the process of etching the oxide layer covering the top of the fins to expose part of the height of the fins, there will be some residual oxidation on the sidewalls of the fins. object layer. This part of the oxide layer will directly affect the performance of the subsequently formed FinFET. Analyzing the reason, it may be that, in the fabrication process of the fin field effect transistor, based on the structural requirements of the fin field effect transistor to be formed and the influence of process conditions, the density of the oxide formed on the fin is different, based on The difference in the density of the oxide layer in different parts causes the difference in the etching rate of the oxide layer in different parts of subsequent etching. Typical examples such as:

[0034] In the manufacturing process of the fin field effect transistor, the formation process of the oxide layer...

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Abstract

The invention discloses a fin-type field effect transistor forming method. After a semiconductor substrate is etched to form an oxide layer coating a fin, the oxide layer is etched, the fin with a partial height is exposed, and part of the oxide layer is kept on the side wall of the fin; and then ions are injected in the remaining oxide layer on the side wall of the fin, and the remaining oxide layer injected with ions on the side wall of the fin is removed. After the ions are injected in the oxide layer, binding of the oxide is broken, the etching speed of the oxide layer can be effectively improved, the oxide layer attached to the side wall of the fin can be effectively removed, bad influences on a subsequent manufacturing process of the fin-type field effect transistor by the remaining oxide layer on the side wall of the fin can be avoided, and the performance of the finally-formed fin-type field effect transistor is improved.

Description

technical field [0001] The invention relates to the field of semiconductor formation, in particular to a method for forming a fin field effect transistor. Background technique [0002] With the rapid development of integrated circuit (abbreviated as IC) manufacturing technology, especially after entering the field of submicron feature size, the size of traditional integrated circuits continues to shrink, and the size of semiconductor components must also be reduced accordingly. [0003] However, for example, MOS transistors generate switching signals by applying voltage to the gate to adjust the current through the channel region, but when semiconductor technology enters nodes below 45 nanometers, the ability of traditional planar MOS transistors to control channel current becomes weaker , causing serious leakage current. Conventional MOS transistors have been unable to meet the demand for device performance, and multi-gate devices have attracted widespread attention as a s...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/265
CPCH01L21/265H01L29/66795H01L29/66803
Inventor 刘海龙
Owner SEMICON MFG INT (SHANGHAI) CORP
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