Fin-type field effect transistor forming method
A fin-type field effect and transistor technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems affecting FinFET performance and achieve the effect of avoiding adverse effects
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0033] As described in the background art, during the fabrication of fin field effect transistors, the oxide layer covering the top of the fin is etched to expose a part of the height of the fin, and the remaining part of the sidewall of the fin is oxidized. 物层。 The material layer. This part of the oxide layer will directly affect the performance of the subsequently formed fin field effect transistor. Analyzing the reason, it may be that during the preparation of the fin field effect transistor, based on the structural requirements of the fin field effect transistor to be formed and the influence of the process conditions, the density of the oxide formed on the fin is different. The density of the oxide layer at different locations is different, resulting in a difference in the subsequent etching rate of the oxide layer at different locations. Typical examples are:
[0034] In the preparation process of the fin field effect transistor, the formation process of the oxide layer in...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap