Method for locating double-bit line bridge connection

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for locating double-bit line bridge connection. A carrier silicon wafer is added, one of the double-bit lines is connected with the carrier silicon wafer, then the double-bit lines are cut piecewise, and the double-bit line bridge connection position is judged according to the bright and dim degree of an image of the bit lines. By means of the technical scheme of the method for locating the double-bit line bridge connection, locating of the double-bit line bridge connection is achieved rapidly and efficiently, and the problems of time consumption in traditional locating of the double-bit line bridge failure position and easily caused damage to a weak bridge are solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for positioning double bit line bridges. Background technique [0002] At present, the VC (voltage contrast, VC for short) method is used to locate the failure location of storage products containing buried bit lines, but this method cannot be applied to the failure analysis of double bit line bridges. In order to effectively locate the double bit line bridges For the failure position, we use the method of SEM (Scanning Electron Microsoft, scanning electron microscope, referred to as SEM) to scan the entire bit line in a carpet manner. This method meets the needs of users to a certain extent, and has substantial advantages compared with the previous technology improvement. [0003] But this method is very time-consuming, and weak bridges (which can be but not limited to bonded wire bridges) are easily missed in SEM scans or destroyed by RIE (Reactive...

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Problems solved by technology

[0002] At present, the VC (voltage contrast, VC for short) method is used to locate the failure location of storage products containing buried bit lines, but this method cannot be applied to the failure analysis of double bit line bridges. In order to effectively locate the double bit line bridges For the failure position, we use the method of SEM (Scanning Electron Microsoft, scanning electron microscope, referred to as SEM) to scan the entire bit line in a carpet manner. This method meets the needs of users to a certain extent, and has substantial advantages compared with the previous technology improvement

[0003] But this method is very time-consuming, and weak bridges (can be but not limited to bonded wire bridges), easily missed in SEM scans or destroyed by RIE (Reactive Ion Etching, reactive ion etching, referred to as RIE)

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