A Method for Eliminating Defects of Silicon Substrate During Shallow Trench Isolation Etching Process

Abstract

The invention provides a method for eliminating silicon substrate defects in shallow trench isolation etching process, the method comprising the following steps: providing a silicon substrate, the silicon substrate is covered with an oxide layer and a silicon nitride layer in sequence, wherein the silicon substrate Containing defects; etching the silicon nitride layer until the surface of the oxide layer is exposed to form a first trench; etching the oxide layer along the first trench until the silicon substrate is exposed to form a second trench; Etching the silicon substrate along the first trench and the second trench until the defects are exposed to form a third trench; etching the exposed defects along the first trench, the second trench and the third trench and make it cleared; etch the silicon substrate along the first trench, the second trench and the third trench, and finally complete the etching of the shallow trench isolation region. The invention prevents the formation of defects in the isolation trench by individually etching the defects in the silicon substrate, reduces the leakage phenomenon in the shallow trench isolation process, and achieves the required isolation effect.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for eliminating silicon base defects in the shallow trench isolation process. Background technique [0002] With the continuous development of integrated circuit manufacturing technology, semiconductor process technology has entered the deep sub-micron era, chip integration has continued to increase, and the size of components in the chip has therefore continued to shrink. However, no matter how the component size is reduced, each component in the chip must still have proper insulation or isolation to ensure good component performance. When the characteristic line width of components shrinks below 0.25 microns or even enters the nanometer stage, the traditional intrinsic oxidation isolation technology (LOCOS) is replaced by shallow trench isolation technology (STI) because it cannot meet the requirements of device electrical characteristics and small size. STI te...

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Problems solved by technology

[0008] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of method for eliminating silicon substrate defect in shallow trench isolation process, be used for solving the taper defect ( Cone defect) problem, so as to solve the leakage phenomenon in the shallow trench isolation process

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