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Equivalent Circuit and Simulation Method of Sampling Tube

A technology of equivalent circuit and simulation method, which is applied in the direction of electrical digital data processing, special data processing applications, instruments, etc., to achieve the effect of improving accuracy

Active Publication Date: 2017-10-20
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the source is biased at 1V, the drain voltage will rise to about 4V before it starts to turn on, and the simulation curve described by the BSIM model has already started to turn on from 1V, and there is no model parameter that can make the simulation curve shift to the right. to 4V

Method used

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  • Equivalent Circuit and Simulation Method of Sampling Tube
  • Equivalent Circuit and Simulation Method of Sampling Tube
  • Equivalent Circuit and Simulation Method of Sampling Tube

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Embodiment Construction

[0038] The equivalent circuit of the sampling tube of the present invention, such as Figure 5 As shown, the first and second high voltage field effect transistors are included, and a voltage control voltage source is provided. The gates of the first and second high voltage field effect transistors are connected in parallel to form the gate of the sampling tube equivalent circuit;

[0039] The positive pole of the voltage control voltage source is connected to the drain of the second high voltage field effect transistor (the sampling tube on the right in the figure, which is a small size sampling tube), and its negative pole is connected to the first high voltage field effect transistor (LDMOS on the left in the figure). , The drain of the large-size sampling tube) is connected and led out to form the drain of the equivalent circuit of the sampling tube;

[0040] The body terminals of the first and second high voltage field effect transistors are connected in parallel to the source ...

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Abstract

The invention discloses an equivalent circuit of a sampling tube, comprising first and second high-voltage field effect transistors, a voltage control voltage source, the gates of the first and second high-voltage field effect transistors are led out in parallel, and the voltage control voltage The anode of the source is connected to the drain of the second high-voltage field effect transistor, and the cathode of the source is connected in parallel with the drain of the first high-voltage field effect transistor. The source electrode of the effect transistor is drawn out as the second source electrode, and the body terminals of the two high-voltage field effect transistors are both connected to the first source electrode. The invention also discloses the simulation method of the equivalent circuit of the sampling tube, and the simulation data is more accurate and real.

Description

Technical field [0001] The invention relates to the field of semiconductor integrated circuit design, in particular to a sampling tube equivalent circuit. The invention also relates to a simulation method of the sampling tube equivalent circuit. Background technique [0002] Sampling tube is a circuit scheme that will be used in analog circuit design. Its principle is to use the current ratio of two different size devices, and obtain different current ratios by changing the source voltage bias of one of the devices (sampling ratio ), the device size of the sampling tube is generally relatively large, so the sampling ratio in circuit applications is relatively stable. In theory, the model description of the sampling tube only needs to separately describe the two devices through the BSIM model, but this is based on the assumption that the two devices in the sampling tube are completely independent of each other. In some actual sampling tube structures, the inversion channels of tw...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 王正楠
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP