Reaction chamber and plasma processing device

Abstract

The invention relates to a reaction chamber and a plasma processing device. The reaction chamber is internally provided with a loading device and an ejector pin mechanism, wherein the ejector pin mechanism comprises a supporting part and a plurality of ejector pin assemblies; each ejector pin assembly comprises an ejector pin, a compressing spring, a baffle and a limiting block; each ejector pin is arranged on the supporting part and corresponding to one vertical channel in the vertical direction; a vertical first concave hole is formed below each ejector pin; each compressing spring is arranged in each concave hole, and the top end of each compressing spring is in contact with the top wall of an annular concave part in order to provide a vertical elasticity to drive each ejector pin to raise; a first step and a second step are arranged on the peripheral wall of each ejector pin, wherein the first step is positioned above the second step; the baffles are arranged on the first steps; the limiting blocks are fixed on the supporting part, comprising coiling parts which coil the ejector pins and are positioned between the first steps and the second steps. According to the reaction chamber, a processed workpiece can be simply transmitted, the structure is simple, and therefore, the transmission process is easily controlled, and the manufacturing cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor equipment manufacturing, in particular to a reaction chamber and plasma processing equipment. Background technique [0002] figure 1 It is a structural schematic diagram of a reaction chamber of an existing Physical Vapor Deposition (Physical Vapor Deposition, hereinafter referred to as PVD) equipment. Such as figure 1 As shown, the reaction chamber 1 of the PVD equipment is provided with a target 2 , a base 3 , a thimble mechanism 4 , a shielding plate 5 , a first driving device 6 , a second driving device 7 and a third driving device 8 . Wherein, the base 3 is used to carry the workpiece to be processed. The first driving device 6 is arranged under the base 3 and is used to drive the base 3 to move up and down in the vertical direction. The thimble mechanism 4 is arranged below the base 3, and it includes a thimble base 41 and a plurality of thimbles 42; the second driving device 7 is connected ...

AI Technical Summary

Problems solved by technology

[0005] The above-mentioned reaction chamber 1 drives the base 3 through the first driving device 6, and the thimble mechanism 4 is driven by the second driving device 7. Cooperating with the manipulator / third driving device 8, the transmission of the processed workpiece / shielding disk 5 is realized, but the process is very complicated. ; Moreover, there are many controls involving the first drive device 6, the second drive device 7 and the manipulator, resulting in a cumbersome debugging process

[0006] In addition, in the above-mentioned reaction chamber 1, the second driving device 7 is connected to the edge position of the thimble base 41 with the thimble mechanism 4, so that the thimble base 41 forms a cantilever structure. In this case, the verticality of the plurality of thimbles 42 is difficult. Guaranteed, which will affect the levelness of the processed workpiece when it is placed on the thimble mechanism 4

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