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NAND FLASH bad block management system and method

A management method and management system technology, applied in the field of integrated circuit storage, to achieve the effect of improving effectiveness, improving accuracy and improving efficiency

Inactive Publication Date: 2015-07-08
SHANGHAI JIAO TONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The difficulty in applying NAND is that the management of flash requires a special system interface

Method used

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  • NAND FLASH bad block management system and method
  • NAND FLASH bad block management system and method
  • NAND FLASH bad block management system and method

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0032] Such as figure 1 As shown, the present invention includes an interface control unit of NAND FLASH, an interface control unit of nonvolatile memory and a bad block management unit. Non-volatile memory can bring higher data validity to EEPROM than conventional writing in the OOB area of ​​NAND FLASH.

[0033] Such as figure 2 As shown, traverse each block (Block) unit of the NAND FLASH array in the order of increasing block address (Block Address), check the first OOB area of ​​the current block (Block), if the first byte (Byte) of the area It is 8'h00, indicating that the Block unit is a bad block. If it is not 8'h00, then perform an erase operation on the block. If the status register shows that the erase is successful, then perform bit error detection, otherwise program the first byte (Byte) data of the first OOB area to 8' h00 is used to mark the bad block, and the block (Block) represented by the address is marked as a bad block in the bad block table of the embe...

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Abstract

The invention discloses a NAND FLASH bad block management system. The bad block management system comprises a NAND FLASH interface control unit, a bad block management unit, a nonvolatile memory interface control unit and a nonvolatile memory, wherein the NAND FLASH interface control unit is connected with a NAND FLASH array and the bad block management unit; the bad block management unit is connected with the nonvolatile memory through the nonvolatile memory interface control unit. The nonvolatile memory interface control unit is an EEPROM (Electrically Erasable Programmable Read-Only Memory). The bad block management is based on an FPGA (Field Programmable Gate Array).

Description

technical field [0001] The invention belongs to the technical field of integrated circuit storage, and in particular relates to a NAND FLASH bad block management system and method. Background technique [0002] FLASH is a form of electronic erasable programmable read-only memory that allows it to be erased or written multiple times during operation. This technology is mainly used for general data storage, as well as for exchanging and transmitting data between computers and other digital products, such as memory cards and USB flash drives. Flash memory is a special type of EEPROM that is erased in macroblocks. Early flash memory erased the data on the entire chip once. Flash memory is non-volatile memory. This means that it does not need to consume power just to save data. Flash memory also has better dynamic shock resistance than hard disks. These characteristics are why flash memory is widely adopted in mobile devices. The flash memory stores data in an array of memo...

Claims

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Application Information

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IPC IPC(8): G06F12/02
Inventor 周仕成殷科军舒汀唐斌郁文贤黄飞
Owner SHANGHAI JIAO TONG UNIV
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