Heat transfer structure and manufacturing method thereof

Abstract

The present invention provides a heat transfer structure, which includes: a first object; a second object; and a heat transfer bonding material arranged between the first object and the second object to be connected with the first object or the second object at least one contact of . The heat transfer adhesive material includes: a resin; and at least one heat conductive material, and the at least one heat conductive material is distributed by being dispersed in the resin, and comes into surface contact with at least one of the first object or the second object.

Description

[0001] related application [0002] This application is based on and claims the priority of Korean Patent Application No. 10-2014-0001586 filed on January 7, 2014 and Korean Patent Application No. 10-2014-0001587 filed on January 7, 2014, incorporated by reference Its disclosure is incorporated herein in its entirety. technical field [0003] The present invention relates to a heat transfer structure and a manufacturing method thereof, in particular to a method capable of arranging a plurality of thermally conductive materials with uniform sizes in a layer between a semiconductor chip and a heat dissipation component, and combining the plurality of thermally conductive materials with the semiconductor chip and the heat dissipation assembly. A heat transfer structure and a manufacturing method thereof in which heat dissipation components are in surface contact to more effectively dissipate heat generated by internal components such as semiconductor chips. Background technique...

AI Technical Summary

Problems solved by technology

[0008] Further, as figure 1 As shown, the thermally conductive materials 52 and 53 can be distributed so as not to be in contact with the semiconductor chip 20 or the heat sink assembly 30, which also results in the low thermal conductivity of the traditional TIM material 50.

[0009] Another reason for the low thermal conductivity of conventional TIM materials may be that the thermally conductive materials 51 to 53 are formed to be in point contact with the semiconductor chip 20 and / or the heat sink assembly 30, such as figure 1 shown

In the case where the heat generated in the semiconductor chip 20 is transferred to the heat sink assembly 30 via point contact, due to the point contact (for example, the point contact between the semiconductor chip 20 and the thermally conductive material 51 and the point between two adjacent thermally conductive materials Contact, etc.) makes the area smaller and thus the thermal conductivity becomes lower

Images