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Method for recovering GaN epitaxial waste wafer

An epitaxial wafer and epitaxy technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of increasing production costs, pollution, waste, etc., and achieve the effect of saving production costs

Active Publication Date: 2015-07-15
XIAN ZOOMVIEW OPTOELECTRONICS SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These epitaxial waste films cannot be processed in the next step due to an abnormality in a certain step in the growth process. When dealing with these epitaxial waste films, they are often discarded as waste products. This method is wasteful and pollutes, and greatly increased production costs

Method used

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  • Method for recovering GaN epitaxial waste wafer
  • Method for recovering GaN epitaxial waste wafer
  • Method for recovering GaN epitaxial waste wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] In this embodiment, in order to recycle the GaN epitaxial scraps grown to the abnormality of the N-GaN layer 102, the surface of the GaN epitaxial scraps is first roughened, and the roughening includes grinding or high-temperature treatment. The grinding treatment is to grind the surface of the GaN epitaxial waste sheet with sandpaper or a grinding wheel, and the grinding depth is controlled within 0.5um; the high-temperature treatment is to heat the GaN epitaxial waste sheet in a baking pan furnace, the heating temperature is greater than 1000 ° C, and the heating The time is 0.5-10h.

[0061] Then place the GaN epitaxial waste sheet into a container containing an acid solution or an alkali solution, the concentration of the acid solution or the alkali solution is greater than 10%, and the temperature of the heated acid solution or alkali solution is greater than 50°C, The time for etching the surface of the GaN epitaxial scrap is 10-30 hours.

[0062] Finally, clean ...

Embodiment 2

[0064] In this embodiment, in order to recycle the GaN epitaxial scrap that grows to the abnormality of the MQW layer 103, the surface of the GaN epitaxial scrap is first roughened, and the roughening includes grinding or high-temperature treatment. The grinding The treatment is to grind the surface of the GaN epitaxial waste sheet with sandpaper or a grinding wheel, and the grinding depth is controlled within 1um; the high-temperature treatment is to heat the GaN epitaxial waste sheet in a baking pan furnace, the heating temperature is greater than 1000 ° C, and the heating time is 0.5 -10h.

[0065] Then place the GaN epitaxial waste sheet into a container containing an acid solution or an alkali solution, the concentration of the acid solution or the alkali solution is greater than 10%, and the temperature of the heated acid solution or alkali solution is greater than 50°C, The time for etching the surface of the GaN epitaxial scrap is 30-50 hours.

[0066] Finally, clean ...

Embodiment 3

[0068] In this embodiment, in order to recover the GaN epitaxial scraps that grow abnormally in the P-GaN layer 104, the surface of the GaN epitaxial scraps is first roughened, and the roughening includes grinding or high-temperature treatment. The grinding treatment is to grind the surface of the GaN epitaxial waste sheet with sandpaper or a grinding wheel, and the grinding depth is controlled within 1um; the high-temperature treatment is to heat the GaN epitaxial waste sheet in a baking pan furnace, the heating temperature is greater than 1000 ° C, and the heating time is 0.5-10h.

[0069] Then place the GaN epitaxial waste sheet into a container containing an acid solution or an alkali solution, the concentration of the acid solution or the alkali solution is greater than 10%, and the temperature of the heated acid solution or alkali solution is greater than 50°C, The time for etching the surface of the GaN epitaxial scrap is 50-100 h.

[0070] Finally, clean the surface o...

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Abstract

The invention discloses a method for recovering a GaN epitaxial waste wafer. The method comprises the following steps: step 2, soaking a GaN epitaxial waste wafer treated in the step 1 into an acidic solution or an alkali solution and then heating the acidic solution or the alkali solution for corroding the surface of the GaN epitaxial waste wafer; step 3, taking out the GaN epitaxial waste wafer corroded in the step 2 and then cleaning the surface of the corroded GaN epitaxial waste wafer with a cleaning liquid. According to the method disclosed by the invention, the abandonment of a large quantity of GaN epitaxial waste wafers can be avoided, so that not only is a lot of production cost reduced, but also the environment cannot be polluted, and the energy-saving and environmental-friendly effects are achieved.

Description

technical field [0001] The invention relates to the field of light-emitting diode chips (Light-Emitting-Diode chips), in particular to a method for recycling GaN epitaxial waste chips. Background technique [0002] LED industry, as an emerging industry, has had a significant impact on this era. In many fields such as lighting applications, backlight applications, and power devices, it has become an inevitable trend for LEDs to replace traditional industries and become the mainstream. [0003] GaN material is the third-generation compound semiconductor that has received the most attention in recent years. GaN materials are wide bandgap direct bandgap semiconductors, N-series III / V group compounds are all direct bandgap semiconductors, AlN / GaN / InN series ternary or quaternary compounds, the bandgap ranges from 1.9eV to 6.2eV, Covers wavelengths from IR to UV. At the same time, GaN materials have good thermal stability, stable chemical properties, high thermal conductivity, ...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/005H01L33/0075
Inventor 李培咸孟锡俊王旭明陈勘刘大为张翼郭迟黄兆斌廉大桢李建婷李玮霖张阳
Owner XIAN ZOOMVIEW OPTOELECTRONICS SCI & TECH