Method for large-scale preparation of black phosphorus with bilayer structure

Abstract

The invention provides a method for large-scale preparation of black phosphorus with a bilayer structure. The method is characterized by comprising steps as follows: 1), white phosphorus or red phosphorus reacts for at least one min at the temperature of 600 DEG C-800 DEG C under the pressure of 6-8 Kbar; 2), a product obtained from the step 1) is placed in an ethanol water solution to be soaked for 4-6 hours; 3), the product is processed for at least 10 min by ultrasonic waves, and the ultrasonic power is 70-80 W. The preparation process is simple, the black phosphorus with the bilayer structure and a higher generation rate can be obtained, and the generation rate can be up to 91.0%. The preparation process is low in cost and facilitates large-scale application.

Description

technical field [0001] The invention relates to the field of preparation technology of double-layer structure black phosphorus, in particular to a method for large-scale preparation of double-layer structure black phosphorus. technical background [0002] Two-dimensional crystal materials are highly valued by the research field of semiconductor materials because of their superior electrical properties. The discovery of two-dimensional graphene announced the emergence of two-dimensional materials in the true sense, and has been a research hotspot in recent years. [0003] However, due to the high processing cost of graphene and the lack of a semiconductor band gap, it is impossible to realize the logic on and off of digital circuits, which hinders the application of graphene. [0004] Therefore, it is extremely urgent to seek a material that can replace graphene. [0005] As a newly discovered substance that can be prepared into two-dimensional crystal materials, black phos...

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Problems solved by technology

[0006] However, in the prior art, the method of preparing double-layer structure black pho