Silicon carbide power component

Abstract

A silicon carbide power component comprises a silicon carbide substrate, a power component structure and a terminal structure. The silicon carbide substrate comprises a drift layer, and the drift layer with first conductivity comprises an active area and a terminal area. The power component structure is arranged in the active area. The terminal structure with second conductivity is arranged in the terminal area, and comprises at least one first doped ring and at least one second doped ring, wherein the first doped ring surrounds the power component structure and is adjacent to the power component structure, and the second doped ring surrounds the first doped ring. The first doped concentration of the first doped ring is lower than the doped concentration of the second doped ring, and the first doped depth of the first doped ring is greater than the doped depth of the second doped ring, and thus, the collapse voltage of the silicon carbide power component is improved.

Description

technical field [0001] The invention relates to a semiconductor element, especially a power element with a terminal structure. Background technique [0002] Power components can be widely used to form various switching components, such as switches of power supplies, telecommunication switches, power switches, etc., which require not only the ability to pass large currents in the active area, but also the ability to withstand large loads in the terminal area. breakdown voltage. [0003] Therefore, for power components, in addition to the active area that can conduct current in the design, it is also necessary to design a terminal structure that can avoid early collapse during reverse bias operation, so as to improve the reliability of the component. The types of traditional terminal structures are: local oxidation of silicon (LOCOS), electric field plate (field plate), and guard ring (guard ring), etc., and in US Patent Publication No. US20100032685, a power element with a t...

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Problems solved by technology

[0004] However, the above-mentioned method is to additionally form the buffer layer to improve the ability of the power device to withstand the breakdown voltage, so that the power device not only needs to increase the steps of making the buffer layer in the process, but also the power device is resistant to the breakdown voltage There is still room for improvement

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