Luminous point rotating, densely arraying and shaping device of semiconductor laser
A shaping device and laser technology, applied in the application field of laser technology, can solve problems such as poor beam quality and energy dead zone in the luminous area, and achieve the effects of easy processing, improved luminous brightness, and simple structure
Inactive Publication Date: 2015-07-29
INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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Problems solved by technology
The semiconductor laser presents a high divergence angle of 30°~70° in the direction perpendicular to the PN junction (fast axis direction), but the light-emitting area is only 1 μm wide, and the beam quality reaches the diffraction limit; in the direction parallel to the PN junction (slow axis direction) ) has only a divergence angle of about 10°, but the length of the light-emitting area is about 100 μm, and there is an energy dead zone between the light-emitting areas, which is equivalent to many light-emitting areas intermittently arranged as a line light source, the beam quality is extremely poor, and the fast axis and The beam quality in the direction of the slow axis varies by a factor of a hundred
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[0028] The semiconductor laser is selected to contain 5 light-emitting points. The size of the fast-axis light-emitting area of each light-emitting point is 1 μm, and the size of the slow-axis light-emitting area is 100 μm. The distance between each light-emitting point is 1000 μm. Energy), slow axis divergence angle is less than 10° (contains 90% energy).
[0029] Use the fast axis collimating lens with a focal length of 360 μm to collimate the semiconductor laser on the fast axis. The spot distribution after collimation is as follows figure 2 As shown, the remaining divergence angle of the fast axis after collimation is 3 mrad, and the spot size in the fast axis direction is 0.5 mm.
[0030] The laser beam passes through the rectangular prism group to rotate and arrange the light-emitting points. The right-angled prism A has a right-angled side of 0.5mm and a height of 1mm, and the right-angled prism B has a right-angled side of 1mm and a height of 0.5mm. UV glue is used ...
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The invention provides a technical scheme of a luminous point rotating, densely arraying and shaping device of a semiconductor laser. The technical scheme comprises a semiconductor laser chip, a heat sink, a fast axis collimating lens, a cylindrical lens group and a rectangular prism group, wherein the semiconductor laser chip is packaged on the heat sink; laser emitted by the semiconductor laser chip penetrates through the fast axis collimating lens, the rectangular prism group and the cylindrical lens group in sequence and then is ejected. According to the technical scheme, the homogenization of fast and slow axis optical beam quality can be realized by the rotation of optical beams, the structure is simple, and elements are easy to process.
Description
technical field [0001] The invention relates to the application field of laser technology, in particular to a rotary close-package shaping device for light-emitting points of semiconductor lasers. Background technique [0002] Due to the advantages of high electro-optical conversion efficiency, good reliability, and miniaturization, semiconductor lasers have been rapidly developed and widely used in laser pumping sources and direct applications, especially as pumping sources for solid-state lasers and fiber lasers. The rapid development of all solid-state lasers. A high-brightness, high-power semiconductor laser pump source is an important basic condition for fiber lasers and solid-state lasers to achieve high efficiency and high power output. [0003] Semiconductor lasers have an asymmetrically distributed output light field. The semiconductor laser presents a high divergence angle of 30°~70° in the direction perpendicular to the PN junction (fast axis direction), but the...
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Login to View More IPC IPC(8): G02B27/09G02B27/30
CPCG02B27/0916G02B27/0961G02B27/0966G02B27/0972G02B27/30
Inventor 唐淳余俊宏郭林辉吴华玲颜昊王昭高松信武德勇
Owner INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS