Coating method for reducing damage to barrier layer

A barrier layer and coating technology, applied in the field of coating, can solve the problems of reduced gas barrier performance and small thickness of the barrier layer, and achieve the effects of improving durability and gas barrier performance, inhibiting reduction, and preventing contact

Inactive Publication Date: 2015-08-05
LG CHEM LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, due to the very small thickness of the barrier layer, the gas barrier performance is significantly reduced when the film is damaged

Method used

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  • Coating method for reducing damage to barrier layer
  • Coating method for reducing damage to barrier layer
  • Coating method for reducing damage to barrier layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0102] Use a thickness of 125μm and about 3 to 4g / m 2 / day water vapor transmission rate (WVTR) of PET film as the substrate layer. Dilute 50 g of tetraethoxy orthosilicate (tetraethoxy orthosilicate) and 50 g of 3-glycidoxypropyltrimethoxysilane (3-glycidoxypropyltrimethoxysilane) with 150 g of ethanol, add 56.4 g of water and 1.6 g of 0.1N HCl, and then the mixture was reacted at room temperature for one day to form a coating composition solution in a sol state. The coating composition solution was coated on the substrate layer by bar coating, and thermally cured at 120° C. for 10 minutes to form an intermediate layer having a thickness of about 0.6 μm. Next, using TiCl 4 and H 2 O was used as a precursor gas to form TiO on the interlayer by atomic layer deposition (ALD) 2 layer (barrier layer) to have a thickness of about 15 nm. Specifically, TiCl is deposited on each of the intermediate layers 4 and H 2 O and reacted under pulse shape for 5 s to form a film, followe...

Embodiment 2

[0104] A barrier film was prepared in the same manner as in Example 1 except that the coating composition was coated by a capillary coating method.

Embodiment 3

[0106] A barrier film was prepared in the same manner as in Example 1 except that the coating composition was applied by the slit coating method.

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Abstract

The present application relates to a coating method for reducing damage to a barrier layer. According to the present application, the coating method without direct contact with the barrier layer is applied to a barrier film when performing a protective coating process for protecting the barrier layer of the barrier film, thereby preventing a decrease of water permeability and enhancing barrier properties against gas.

Description

technical field [0001] The present application relates to a coating method capable of suppressing deterioration of water permeability by performing a non-contact coating method on the barrier layer when protective coating is performed to protect the barrier layer of a barrier film. Background technique [0002] A gas barrier film (ie, a barrier film) has gas barrier properties due to stacking of barrier layers having a thickness of about tens or 100 nm. Examples of methods of forming the barrier layer include atomic layer deposition (ALD). Since the method has good thickness uniformity, film density, and conformality, the method is used to form a metal barrier layer in a semiconductor device, an abrasion-resistant film, or a resist film. In the field of semiconductors, atomic layer deposition (ALD) is usually performed on deposition substrates made of inorganic materials such as silicon wafers. Water molecules are adsorbed onto the surfaces of these inorganic materials to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C26/00
CPCC23C16/45525C23C16/545C23C28/00C23C16/448C23C16/50
Inventor 金东烈黄樯渊李晟焕柳相旭金俊衡孙凡权李贤智
Owner LG CHEM LTD
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