Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of non-phosphor powder Gan-based white LED epitaxial structure and preparation method thereof

An epitaxial structure, no phosphor technology, applied in the field of white light LED, can solve the problems of increasing proportion and expensive equipment, and achieve the effect of reducing color temperature, reducing process cost and improving light conversion efficiency

Active Publication Date: 2018-04-13
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method uses MOCVD (Metal Organic Chemical VapourDeposition, Metal Organic Chemical Vapor Deposition) for a long-term growth process. MOCVD equipment is extremely expensive, and long-term growth increases the proportion of equipment depreciation to the cost of a single epitaxial wafer.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of non-phosphor powder Gan-based white LED epitaxial structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] like figure 1As shown, the epitaxial structure of the phosphor-free GaN-based white light LED of the present invention includes a substrate 1, a GaN buffer layer 2, an N-GaN layer 3, a multi-quantum well layer 4 of ultraviolet light wavelength, and Non-doped high and low temperature GaN layer 5 , multi-quantum well layer 6 and P-GaN layer 7 of blue light wavelength.

[0030] In this embodiment, the substrate 1 is a sapphire substrate. The thickness of the GaN buffer layer 2 is 3 μm. The thickness of the N-GaN layer 3 is 2 μm, and the doping concentration is 3*10 18 cm -1 . The multi-quantum well layer 4 of ultraviolet light wavelength is a 5-period InGaN / AlGaN multi-quantum well structure with thicknesses of 2.5nm and 8nm respectively, and the gallium source used is dimethylgallium. The gallium source in the non-doped high-low temperature GaN layer 5 is trimethylgallium, and the thickness of the non-doped low-temperature GaN layer and the non-doped high-temperature...

Embodiment 2

[0041] In this embodiment, the substrate 1 is a Si substrate. GaN buffer layer 2 has a thickness of 6 μm. N-GaN layer thickness 3 is 3 μm, doping concentration is 9*10 18 cm -1 . The multi-quantum well layer 4 of ultraviolet light wavelength is a 10-period InGaN / AlGaN multi-quantum well structure with thicknesses of 4nm and 9nm respectively, and the gallium source used is dimethylgallium. The gallium source in the non-doped high-low temperature GaN layer 5 is trimethylgallium, and the thicknesses of the non-doped low-temperature GaN layer and the non-doped high-temperature GaN layer are both 120 nm. The multi-quantum well layer 6 of the blue light wavelength is a multi-quantum well structure with 10 cycles of InGaN well layers with a thickness of 4 nm and GaN barrier layers with a thickness of 12 nm. The thickness of the P-GaN layer 7 is 220 nm.

[0042] The method for preparing the epitaxial structure of the above-mentioned phosphor-free GaN-based white light LED compris...

Embodiment 3

[0050] In this embodiment, the substrate 1 is a SiC substrate. GaN buffer layer 2 has a thickness of 10 μm. N-GaN layer thickness 3 is 4 μm, doping concentration is 2*10 19 cm -1 . The multi-quantum well layer 4 of ultraviolet light wavelength is a 12-period InGaN / AlGaN multi-quantum well structure with thicknesses of 5nm and 10nm respectively. The gallium source in the non-doped high-low temperature GaN layer 5 is trimethylgallium, and the thickness of both the non-doped low-temperature GaN layer and the non-doped high-temperature GaN layer is 200 nm. The multi-quantum well layer 6 of the blue light wavelength is a multi-quantum well structure with 15 cycles of InGaN well layers with a thickness of 5 nm and GaN barrier layers with a thickness of 15 nm. The thickness of the P-GaN layer 7 is 300 nm.

[0051] The method for preparing the epitaxial structure of the above-mentioned phosphor-free GaN-based white light LED comprises the following steps:

[0052] (1) In the MOC...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A GaN-based white light LED epitaxial structure without phosphor powder and its preparation method, the epitaxial structure includes a substrate, a GaN buffer layer, an N-GaN layer, a multi-quantum well layer of ultraviolet light wavelength, a non-doped High and low temperature GaN layer, multi-quantum well layer of blue light wavelength, and P-GaN layer; the preparation method thereof includes the following steps: (1) growing a GaN buffer layer on a substrate in an MOCVD device, (2) growing a GaN buffer layer on a GaN buffer layer N-GaN layer is grown on the N-GaN layer, (3) a multi-quantum well layer of ultraviolet wavelength is grown on the N-GaN layer, (4) an undoped low-temperature GaN layer is grown first, and an undoped high-temperature GaN layer is grown subsequently, (5) an undoped high-temperature GaN layer is grown on the N-GaN layer. A multi-quantum well layer of blue light wavelength is grown on the doped GaN layer, and (6) a P-GaN layer is grown on the multi-quantum well layer of blue light wavelength. The invention directly epitaxially produces a complete white light LED structure, effectively simplifies the process, improves the light conversion efficiency of the white light LED, reduces the process cost, and also greatly improves the luminous efficiency of the GaN-based LED.

Description

technical field [0001] The invention relates to an epitaxial structure of a GaN-based white light LED without fluorescent powder and a preparation method thereof, belonging to the technical field of white light LEDs. Background technique [0002] Since 1991, Nakamura et al. of Nichia Company have successfully developed GaN-based blue light-emitting diodes (LEDs), wide bandgap III-V group semiconductor materials mainly composed of GaN, InN, AlN and their ternary and quaternary systems. The rapid development of LEDs has enabled the commercialization of high-brightness light-emitting diodes from green light to near-ultraviolet products. Nitride semiconductor materials have excellent physical and chemical stability, high saturation electron mobility and other characteristics, making them the preferred materials for GaN-based lasers, light-emitting diodes and other optoelectronic devices. As a new high-efficiency solid-state light source for lighting, semiconductor white light-e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32
CPCH01L21/02104H01L33/06H01L33/32
Inventor 张恒曲爽王成新徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS