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TFT substrate manufacturing method and TFT substrate structure

A manufacturing method and substrate technology, applied in semiconductor/solid-state device manufacturing, instruments, semiconductor devices, etc., can solve the problems of unfavorable high aperture ratio display panel manufacturing, small design rules, and small second metal layer design rules, etc., to achieve structural Simple, high aperture ratio, high-resolution effects

Active Publication Date: 2015-09-02
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology

[0008] from figure 2 and image 3 It can be seen in the figure that the connection electrode 620 serves as the first drain of the first TFT and the second source of the second TFT at the same time, thereby connecting the first TFT and the second TFT in series. However, since the connection electrode 620 is located The second metal layer is also distributed with data lines V data , supply voltage line V dd equal signal line, so that the design rule of the connecting electrode 620 is very small, and the bridging between the two TFTs through the connecting electrode 620 will cause the design rule of the second metal layer to become smaller, which is not conducive to high aperture ratio. , and high-resolution display panels

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  • TFT substrate manufacturing method and TFT substrate structure
  • TFT substrate manufacturing method and TFT substrate structure
  • TFT substrate manufacturing method and TFT substrate structure

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Embodiment Construction

[0049] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0050] see Figure 4 to Figure 9 , the present invention at first provides a kind of manufacture method of TFT substrate, comprises the following steps:

[0051] Step 1, such as Figure 4 As shown, a substrate 1 is provided, a first metal layer is deposited on the substrate 1, and the first metal layer is patterned through a photolithography process to form first gates 21 and second gates 23 arranged at intervals. .

[0052] Preferably, the substrate 1 is a glass substrate.

[0053] Specifically, in step 1, the first metal layer is deposited by physical vapor deposition (Physical Vapor Deposition, PVD). Preferably, the material of the first metal layer is copper, aluminum, or molybdenum.

[0054] The photolithography process includes phot...

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Abstract

The invention provides a TFT substrate manufacturing method and a TFT substrate structure. According to the TFT substrate manufacturing method, a connecting semiconductor (42) which is disposed on a semiconductor layer and which is subjected to N-type heavy doping is connected with a first semiconductor (41) and a second semiconductor (43) so as to connect the first semiconductor with the second semiconductor in series. The connecting semiconductor (42) subjected to N-type heavy doping substitutes for a connecting electrode disposed on a second metallic layer in the prior art such that a problem of limitation, due to a fact that the connecting electrode and signal lines such as a data line and a voltage supply line are arranged on the second metallic layer together, on a design rule of the connecting electrode and the second metallic layer is prevented and an aperture ratio and resolution of a display panel are easy to increase. The invention also provides the TFT substrate structure simple in structure and high in aperture ratio and resolution.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a manufacturing method and structure of a TFT substrate. Background technique [0002] In the field of display technology, flat panel display technologies such as Liquid Crystal Display (LCD) and Organic Light Emitting Diode (OLED) have gradually replaced CRT displays. Among them, OLED has many advantages such as self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast, nearly 180° viewing angle, wide temperature range, and can realize flexible display and large-area full-color display. It is recognized by the industry as the display device with the most development potential. [0003] OLED can be divided into passive OLED (PMOLED) and active OLED (AMOLED) according to the driving type; among them, the AMOLED device is driven by current, and its requirement on the current of thin film transistor (Thin Film Transistor, T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/84H01L27/12
CPCH01L21/845H01L27/1214G09G3/3225H01L21/84H01L29/78645H01L29/78696H01L29/7869G09G2300/043G09G2300/0465H01L21/02565H01L21/02631H01L27/1225H01L27/124H01L27/127H01L29/4908
Inventor 石龙强韩佰祥
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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