Storage unit for static random access memory and static random access memory

Abstract

The invention provides a storage unit for a static random access memory and the static random access memory, wherein the storage unit for the static random access memory comprises a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a first PMOS transistor, a second PMOS transistor and a third PMOS transistor; a first inverter is composed of the first NMOS transistor and the first PMOS transistor; a second inverter is composed of the second NMOS transistor and the second PMOS transistor, the first inverter and the second inverter are in cross coupling to form a bistable trigger; the third NMOS transistor is connected with the output end of the first inverter, and the third PMOS transistor is connected with the output end of the second inverter. In the storage unit for the static random access memory and the static random access memory, the three NMOS transistors and the three PMOS transistors are adopted, so that reading and writing are independent with each other, the redundancy degree of reading and writing is increased, and thus the stability of a reading state of the static random access memory is improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a storage unit for a static random access memory and the static random access memory. Background technique [0002] With the development of storage technology, various types of semiconductor memories have emerged, such as static random access memory (SRAM), dynamic random access memory (DRAM), erasable programmable read-only memory (EPROM), electrically erasable programmable Read memory (EEPROM) and flash memory (Flash), etc. [0003] Among them, SRAM does not use capacitors, but stores data based on bistable flip-flops, so the stored data can be saved without periodically charging the capacitors. As long as there is continuous power supply, the SRAM can maintain its storage state without any data updating operation. Since it can operate normally without constant charging, the processing speed of the SRAM is faster and more stable than other memories, and it is usually used as a...

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to provide a storage unit and SRAM for SRAM, to solve the problem that read interference is prone to occur in the existing SRAM when reading operation

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