Semiconductor device, method of manufacturing semiconductor device, and electronic apparatus

Abstract

Disclosed is a semiconductor device including a first semiconductor substrate and a first atom diffusion prevention portion, the first atom diffusion prevention portion being arranged at a part on the first semiconductor substrate and configured to prevent diffusion of an atom having a dangling bond terminating effect.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Japanese Priority Patent Application JP2014-040388 filed on Mar. 3, 2014, the entire contents of which are incorporated herein by reference. technical field [0003] The present disclosure relates to a semiconductor device, a method of manufacturing the semiconductor device, and an electronic device, and in particular, to a method capable of suppressing the size of a semiconductor substrate while controlling the concentration of atoms having a dangling bond termination effect on the surface of the semiconductor substrate for each region. An enlarged semiconductor device, a method of manufacturing the semiconductor device, and an electronic device. Background technique [0004] In a solid-state image pickup element such as a CCD (Charge Coupled Device) or a CMOS (Complementary Metal Oxide Semiconductor) image sensor, it is important to reduce dark current on the surface of a semico...

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Problems solved by technology

[0010] However, according to the method of Japanese Patent Application Laid-Open No. 2009-188068, it is difficult to control the remaining hydrogen amount of the passivation film in a region not far from the boundary between the pixel portion and the peripheral circuit portion

Therefore, active elements, etc., whose hydrogen supply amount is ideally controlled cannot be arranged, which leads to an increase in the size of the semiconductor substrate

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