Optical detector based on BiCuSeO thermoelectric thin-film transverse thermoelectric effect

A lateral thermoelectric, bismuth copper selenide technology, applied in the direction of thermoelectric device node lead-out material, electric solid device, circuit, etc., can solve the problems of wide response band, high detection sensitivity, low detection sensitivity, etc., to achieve wide response band , the effect of high detection sensitivity

Active Publication Date: 2015-09-09
香河汇文节能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The existing lateral pyroelectric photodetectors have low detection sensitivity, and it is necessary to study a photodetector different from the existing materials, so that t

Method used

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  • Optical detector based on BiCuSeO thermoelectric thin-film transverse thermoelectric effect
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  • Optical detector based on BiCuSeO thermoelectric thin-film transverse thermoelectric effect

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Experimental program
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Example Embodiment

[0026] Example 1

[0027] 1. The transverse thermoelectric element adopts LaAlO obliquely cut at 3° on the c axis 3 A layer of bismuth-copper-selenium-oxygen thin film with a thickness of 110nm grown obliquely along the c-axis was prepared on a single crystal substrate with a tilt angle of 3°.

[0028] The specific preparation process is as follows: Weigh Bi according to the atomic molar ratio of the chemical formula BiCuSeO 2 O 3 , Elemental Cu, Bi and Se are mixed to obtain a mixture material, the mixture material is ground in a ball mill for 30 hours, the ground material is pressed into a disc with a thickness of 3mm and a diameter of 25mm, and the above disc is vacuum sealed Technology The wafer is encapsulated in a quartz tube and then sintered by a high-temperature solid-phase reaction method to obtain the required bismuth copper selenium oxide polycrystalline ceramic target. Put the obtained bismuth-copper-selenium-oxygen polycrystalline ceramic target into the PLD cavity, a...

Example Embodiment

[0034] Example 2

[0035] 1. The transverse thermoelectric element adopts LaAlO which is obliquely cut at 5° on the c axis 3 A layer of bismuth-copper-selenium-oxygen thin film with a thickness of 110nm and grown obliquely along the c-axis was prepared on a single crystal substrate with a tilt angle of 5°.

[0036] The specific preparation process is as follows: Weigh Bi according to the atomic molar ratio of the chemical formula BiCuSeO 2 O 3 , Elemental Cu, Bi and Se are mixed to obtain a mixture material, the mixture material is ground in a ball mill for 30 hours, the ground material is pressed into a disc with a thickness of 3mm and a diameter of 25mm, and the above disc is vacuum sealed Technology The wafer is encapsulated in a quartz tube and then sintered by a high-temperature solid-phase reaction method to obtain the required bismuth copper selenium oxide polycrystalline ceramic target. Put the obtained bismuth-copper-selenium-oxygen polycrystalline ceramic target into the ...

Example Embodiment

[0042] Example 3

[0043] 1. The transverse thermoelectric element adopts LaAlO which is obliquely cut 10° on the c axis 3 A layer of bismuth-copper-selenium-oxygen thin film with a thickness of 110nm and grown obliquely along the c-axis was prepared on a single crystal substrate with a tilt angle of 10°.

[0044] The specific preparation process is as follows: Weigh Bi according to the atomic molar ratio of the chemical formula BiCuSeO 2 O 3 , Elemental Cu, Bi and Se are mixed to obtain a mixture material, the mixture material is ground in a ball mill for 30 hours, the ground material is pressed into a disc with a thickness of 3mm and a diameter of 25mm, and the above disc is vacuum sealed Technology The wafer is encapsulated in a quartz tube and then sintered by a high-temperature solid-phase reaction method to obtain the required bismuth copper selenium oxide polycrystalline ceramic target. Put the obtained bismuth-copper-selenium-oxygen polycrystalline ceramic target into the P...

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Abstract

The invention provides an optical detector based on BiCuSeO thermoelectric thin-film transverse thermoelectric effect. The optical detector comprises a transverse thermoelectric element. The upper surface of the transverse thermoelectric element is provided with two symmetrical metal electrodes to act as voltage signal output ends. The voltage signal output end of the transverse thermoelectric element and the input end of a voltmeter are connected by an electrode lead wire. The optical detector is characterized in that the transverse thermoelectric element comprises an oxide single crystal substrate and a BiCuSeO thin-film which is grown on the oxide single crystal substrate in a c-axis inclined way. The metal electrodes are arranged on the upper surface of the BiCuSeO thin-film. According to the optical detector based on the BiCuSeO thin-film transverse thermoelectric effect, refrigeration is not needed, response waveband is wide and detection sensitivity is high so that optical and thermal detection can be realized simultaneously.

Description

Technical field [0001] The invention belongs to the technical field of thin film photodetectors, and specifically relates to a photodetector based on the lateral pyroelectric effect of a bismuth-copper-selenium-oxygen thermoelectric film. Background technique [0002] When a beam of light irradiates the surface of a film that grows obliquely on the c-axis, the surface layer of the film immediately establishes a temperature difference between the upper and lower surfaces of the film after absorbing the light radiation. If the Seebeck coefficient of the film material is anisotropic, it will An open-circuit voltage signal perpendicular to the temperature difference is detected on the surface of the film. This effect is called the light-induced lateral thermoelectric effect. The photodetector designed and prepared based on this effect is a transverse pyroelectric photodetector, and the output voltage amplitude of the detector can be expressed by the following formula: [0003] V ...

Claims

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Application Information

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IPC IPC(8): H01L27/16H01L35/14
Inventor 王淑芳吴晓琳闫国英王莲王江龙傅广生
Owner 香河汇文节能科技有限公司
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