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Heat shield for improved continuous czochralski process

A technology of thermal barrier and Czochralski method, applied in the directions of self-melt pulling method, chemical instruments and methods, single crystal growth, etc., can solve the economic impact of ingot production, increase the complexity and cost of system design, and dislocation Defects and other issues

Inactive Publication Date: 2015-09-09
SOLAICX
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When this powder or dust falls back into the silicon melt, it can affect the structure of the growing single crystal, creating dislocation defects
Ingot yield and growth economics are severely impacted
Additionally, radiative and convective heat losses require the addition of additional heat to keep the silicon molten
This extra heat adds complexity and cost to the system design
[0010] While this conventional arrangement may be sufficient to limit the transport of unmelted silicon particles from the melt replenishment zone to the crystal growth zone, this conventional kiln sill arrangement does not address the issue of radiative and convective heat loss to the outside atmosphere

Method used

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  • Heat shield for improved continuous czochralski process
  • Heat shield for improved continuous czochralski process
  • Heat shield for improved continuous czochralski process

Examples

Experimental program
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Embodiment Construction

[0018] figure 2 A schematic diagram of an exemplary embodiment of an apparatus for growing an ingot by the Czochralski method is shown. In this embodiment, a kiln ridge 208 is disposed in a crucible 200 that holds a silicon melt 202 . The kiln ridge 208 is generally cylindrical with a side wall 222 bearing on the bottom of the crucible and extending upwardly to define a growth zone 210 in the silicon melt 202 . The kiln ridge 208 divides the melt into two parts, an inner growth zone 210 and an outer melt replenishment zone 212 . That is, the cylindrical ridge separates the growth zone 210 from the first or outer melt replenishment zone 212 to substantially insulate and prevent thermal and mechanical disturbances from affecting crystals grown within the growth zone 210 . Kiln ridge 208 also defines passageway 214 for providing controlled melt flow between outer melt replenishment zone 212 and growth zone 210 . A feed supply 221 supplies a solid silicon feed source, such as c...

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Abstract

An apparatus for growing ingots by the Czochralski method is described. The ingots are drawn from a melt / crystal interface in a quantity of molten silicon replenished by crystalline feedstock. The apparatus includes a crucible configured to hold the molten silicon and a weir supported in the crucible. The weir is configured to separate the molten silicon into an inner growth region from an outer region configured to receive the crystalline feedstock. The weir includes a sidewall extending vertically and a top wall. An annular heat shield is disposed on the top wall of the weir that covers at least about 70% of the outer region.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Patent Application No. 13 / 688,969, filed November 29, 2012, which is hereby incorporated by reference in its entirety. technical field [0003] The technical field of the disclosure herein relates generally to growing crystalline semiconductor materials by the Czochralski process. More specifically, the technical field of the disclosure herein relates to continuous Czochralski processes using annular thermal barriers for improving crystal stretching rates and crucible life. Background technique [0004] In a continuous Czochralski (CZ) crystal growth process, the melt is replenished or refilled as the crystal grows. This is in contrast to batch refill, where the melt is refilled after it has been depleted by the completion of the crystal growth process. In either case, the melt can be supplemented with a solid feed or a molten feed. [0005] The continuous Czochralski process f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/12C30B15/14
CPCC30B15/14C30B15/12C30B15/002Y10T117/1052
Inventor T·N·斯瓦米纳坦
Owner SOLAICX