Processing method of aluminum interconnect layer, cleaning chamber and plasma processing apparatus

Abstract

The invention provides a processing method of an aluminum interconnect layer, a cleaning chamber and a plasma processing apparatus. The processing method of the aluminum interconnect layer includes the following steps of: an aluminum etching step: an etching gas is utilized to etch an aluminum metal layer of a wafer, wherein the etching gas includes chlorine gas; a chlorine gas removal step: an alkaline solution is utilized to remove chlorine gas left on the surface of the wafer, and then, residual liquid on the surface of the wafer is dried by means of a sweeping gas. According to the processing method of the aluminum interconnect layer provided by the invention, the removal of the chlorine gas left on the surface of the wafer can be realized under room temperature, and therefore, adverse thermal influences on devices on the wafer caused by high-temperature environment can be avoided, and processing procedures and the structure of equipment can be simplified, and processing efficiency can be improved, and the manufacturing cost of the equipment can be decreased.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a process method of an aluminum interconnection layer, a cleaning chamber and plasma processing equipment. Background technique [0002] With the rapid development of microelectronics processing technology, users have higher and higher requirements for product quality, which prompts enterprises to continuously improve production equipment and processes to meet new market demands. As an important microelectronic processing technology, the semiconductor integrated circuit industry is constantly being updated at an astonishing speed. Among them, the processing of metal interconnection layers in integrated circuits is a very critical technology. At this stage, although the application of copper interconnection layers is gradually increasing, the application of aluminum interconnection layers is gradually decreasing. However, due to the It can match the subsequent packaging ...

AI Technical Summary

Problems solved by technology

[0006] First, because the above-mentioned aluminum metal etching process needs to carry out the wafer cooling step after the step of removing residual chlorine gas, the process flow is more complicated, thereby reducing the process efficiency

[0007] Second, due to the use of oxygen microwave plasma to remove residual chlorine, it is not only necessary to add a heating device to the cleaning chamber for removing chlorine, but also to add a cooling chamber, resulting in a complex structure of the plasma processing equipment, thereby improving the efficiency of plasma processing. Manufacturing cost of equipment

[0008] Third, since the reaction temperature needs to be controlled at about 250-300°C during the step of removing residual chlorine gas, the high-temperature environment will have adverse thermal effects on the devices on the wafer, resulting in a decrease in the quality of the wafer

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