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Semiconductor device and manufacturing method thereof, and electronic apparatus

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as electrostatic damage to EEPROM devices, failure to meet the needs of ESD protection, and failure of ESD protection devices to be triggered, etc., to achieve Effects of improving anti-ESD characteristics and improving reliability

Active Publication Date: 2015-09-16
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the performance of the high-voltage NMOS device usually cannot meet the requirements for ESD protection in special occasions, mainly as follows: In the prior art, the actual trigger voltage (trigger voltage) of the high-voltage NMOS used as an ESD protection device is usually lower than the design target The value should be high, the actual value of the trigger voltage is usually around 14V, and the design target value is usually 10V; this leads to the fact that the ESD protection device cannot be triggered in the presence of static electricity greater than 10V and less than 14V, which will cause EEPROM devices electrostatic damage

Method used

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  • Semiconductor device and manufacturing method thereof, and electronic apparatus
  • Semiconductor device and manufacturing method thereof, and electronic apparatus
  • Semiconductor device and manufacturing method thereof, and electronic apparatus

Examples

Experimental program
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Embodiment 1

[0052] The semiconductor device of the present invention, including the ESD protection device, has stronger ESD protection capability than the prior art. The semiconductor device may be an EEPROM, or other semiconductor devices including ESD protection devices.

[0053] Below, refer to figure 2 The structure of the semiconductor device of this embodiment will be described. The semiconductor device of this embodiment, such as figure 2 As shown, it includes a semiconductor substrate 100 and a core device (not shown in the figure) and an ESD protection device located on the semiconductor substrate 100 . Wherein, the core device refers to a device that realizes the core function of the semiconductor device, such as a device that realizes a storage function; the ESD protection device refers to a device used to prevent damage to the core device caused by ESD. Exemplarily, the semiconductor device of this embodiment is an EEPROM, and the ESD protection device can adopt the desig...

Embodiment 2

[0060] The method for manufacturing a semiconductor device in this embodiment is used to manufacture the semiconductor device described in Embodiment 1. Below, refer to Figure 4 Detailed steps of a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described.

[0061] A method for manufacturing a semiconductor device in this embodiment includes the following steps:

[0062] Step A1: providing a semiconductor substrate, and defining an active area (AA) on the semiconductor substrate.

[0063] Step A2: performing channel region ion implantation.

[0064] Step A3: forming a well region of a high voltage PMOS.

[0065] Step A4: Adjusting the threshold voltage of the high voltage NMOS.

[0066] Wherein, the high-voltage NMOS includes an ESD protection device.

[0067] Step A5: forming a high-voltage NMOS isolation (isolation) structure, such as shallow trench isolation.

[0068] Step A6: forming a gate oxide layer abov...

Embodiment 3

[0097] An embodiment of the present invention provides an electronic device, which includes: the semiconductor device described in Embodiment 1, or the semiconductor device manufactured according to the method for manufacturing a semiconductor device described in Embodiment 2.

[0098] Since the semiconductor device used has better ESD resistance and reliability, the electronic device also has the above-mentioned advantages.

[0099] The electronic device can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP, etc. It is an intermediate product with the above-mentioned semiconductor device, for example: a mobile phone motherboard with the semiconductor device.

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PUM

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Abstract

A semiconductor device is provided. The semiconductor device includes a semiconductor substrate and an electrostatic discharge (ESD) protection device disposed on the semiconductor substrate. The ESD protection device includes a source and a drain disposed in the semiconductor substrate, a gate disposed on the semiconductor substrate between the source and the drain, and a p-type doped region disposed in the drain.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] In the field of semiconductor technology, EEPROM (Electrically Erasable Programmable Read-Only Memory), as a non-volatile storage device, is widely used in electronic devices such as computers and mobile phones. [0003] Due to the complexity of the application environment, in semiconductor devices such as EEPROM, the protection of ESD (Electro-Static discharge; electrostatic discharge) is very important. However, in the current EEPROM, the performance of the ESD protection device is often difficult to meet the actual needs. [0004] In the current EEPROM process, a high-voltage NMOS device (rated operating voltage is generally 5V) is usually used as an ESD protection device. The structure of the high-voltage NMOS device used as an ESD protection device ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02H01L21/77H10B69/00
CPCH01L27/11526H01L27/0266H01L21/823857H01L29/66659H01L29/7835H01L29/0847H01L21/823814
Inventor 王孝远周川淼金凤吉李宏伟郭兵郭之光
Owner SEMICON MFG INT (SHANGHAI) CORP