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Semiconductor laser light source

A laser light source, semiconductor technology, applied in the direction of semiconductor lasers, lasers, structures of optical waveguide semiconductors, etc.

Inactive Publication Date: 2015-09-16
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, there is the same problem as in the case of Patent Document 1

Method used

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  • Semiconductor laser light source
  • Semiconductor laser light source
  • Semiconductor laser light source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0031] Embodiment 1 of the present invention will be described below using the drawings. figure 1 It is a cross-sectional view showing the state before the semiconductor laser 1 and the base 2 are joined in the semiconductor laser light source of Embodiment 1, figure 2 It is a plan view of the semiconductor laser light source of Embodiment 1, image 3 yes figure 2 The A-A line sectional view, Figure 4 yes figure 2 B-B line sectional view.

[0032] Such as figure 1 As shown, the semiconductor laser light source includes a semiconductor laser 1 and a base 2 . The semiconductor laser 1 has, for example, a multi-emitter structure in which a plurality of light-emitting points exist. The semiconductor laser 1 includes a semiconductor laser substrate 11 , an active layer 10 and an Au layer 12 .

[0033] The active layer 10 is disposed on the semiconductor laser substrate 11 figure 1 in the lower surface. Since the output characteristics and reliability of the semiconduct...

Embodiment approach 2

[0053] Next, a semiconductor laser light source according to Embodiment 2 will be described. Figure 6 is a cross-sectional view showing the state before the semiconductor laser 1 is joined to the base 32 in the semiconductor laser light source of Embodiment 2, Figure 7 It is a sectional view of the semiconductor laser light source of Embodiment 2. It should be noted that, in Embodiment 2, the same components as those described in Embodiment 1 are assigned the same reference numerals to omit description.

[0054] Such as Figure 6 and Figure 7 As shown, in Embodiment 2, the Au film 31 is arranged on the side surface of the base 32 corresponding to the output terminal 1 a side of the semiconductor laser 1 . It should be noted that other structures of the base 32 are the same as those of the base 2 .

[0055] As described above, in the semiconductor laser light source according to Embodiment 2, since the Au film 31 is disposed on the side surface of the base 32 correspondi...

Embodiment approach 3

[0057] Next, a semiconductor laser light source according to Embodiment 3 will be described. Figure 8 is a cross-sectional view showing the state before the semiconductor laser 1 is joined to the base 42 in the semiconductor laser light source of Embodiment 3, Figure 9 It is a plan view of the semiconductor laser light source of Embodiment 3, Figure 10 yes Figure 9 C-C line sectional view. In Embodiment 3, the same components as those described in Embodiments 1 and 2 are denoted by the same reference numerals to omit description.

[0058] Such as Figure 8 to Figure 10 As shown, in the third embodiment, the structure of the barrier layer 23 of the base 42 is different from that in the first and second embodiments. The barrier portion 23b of the barrier layer 23 is formed over the entire outer circumference of the outer peripheral portion of the horizontal portion 23a. That is, the blocking portion 23b is formed over the entire outer peripheral portion corresponding to...

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Abstract

A semiconductor laser light source includes a semiconductor laser (1), and a sub-mount (2). The sub-mount (2) includes a sub-mount substrate (20), an Au layer (22) placed above the sub-mount substrate (20), a barrier layer (23) which is placed on the Au layer (22) and has a barrier portion (23b) at least in a portion of its outer peripheral portion which is other than a portion corresponding to a side of an output end of the semiconductor laser (1), and a solder layer (25) placed on the barrier layer in an area surrounded by the barrier portion (23b), wherein the semiconductor laser (1) is bonded to the sub-mount (2) through the solder layer (25), in a state where the semiconductor laser (1) is spaced apart by a predetermined interval from an inner surface of the barrier portion (23b), and further, the output end protrudes, in a direction of output of the laser light, from an end of the solder layer (25) which corresponds to the side of the output end of the semiconductor laser (1).

Description

technical field [0001] The present invention relates to a high-output semiconductor laser light source in which a high-output semiconductor laser is bonded to a base, and more particularly to a structure capable of improving the output characteristics and reliability of the semiconductor laser light source by efficiently dissipating heat generated by the semiconductor laser through the base. Background technique [0002] Semiconductor lasers output laser light and generate heat during operation. In general, heat dissipation is important for semiconductor lasers in order to improve output characteristics and reliability at low temperatures. As a heat sink for heat dissipation, a member made of a high heat dissipation metal material (for example, Cu, etc.) is used. However, since a heat sink made of Cu or the like has a larger coefficient of linear expansion than a semiconductor laser, direct bonding is difficult. Therefore, in general, the semiconductor laser is joined to a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/022
CPCH01S5/0224H01S5/20H01S5/02272H01S5/0234H01S5/0237
Inventor 山本修平中村聪池田一贵
Owner MITSUBISHI ELECTRIC CORP
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