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Polymer photovoltaics employing a squaraine donor additive

A polymer and donor technology, applied in photovoltaic power generation, electro-solid devices, semiconductor devices, etc., can solve the problems of difficult design and synthesis, time-consuming, short-circuit current density PCE increase, etc.

Inactive Publication Date: 2015-09-16
RGT UNIV OF MICHIGAN +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

While many polymers have been developed for use in organic PV devices, designing and synthesizing molecules with significant NIR absorption can be difficult and time-consuming
Furthermore, serial design and fabrication can be complex due to the large number of layers and parameters that must be optimized
The fact that two or more polymer-organic PV subcells are stacked using solution processing, where the solvent used to deposit one layer can dissolve previously deposited subcells, presents a formidable challenge to fabrication.
[0033] It has been reported that blending two polymer donors can increase the wavelength range for absorption, resulting in a short-circuit current density (J SC ) and PCE increase

Method used

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  • Polymer photovoltaics employing a squaraine donor additive
  • Polymer photovoltaics employing a squaraine donor additive
  • Polymer photovoltaics employing a squaraine donor additive

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Embodiment

[0090] Using 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl]squaric acid (DBSQ) additive and poly(3-hexylthiophene) (P3HT) polymer Bulk materials to fabricate organic photosensitive optoelectronic devices. DBSQ absorbs strongly at wavelengths from λ=520 to 750nm and has a peak optical density of 2.0x10 at λ=700nm 5 cm -1 , while P3HT absorbs at λ=400 to 630 nm. The fabricated device has the following structure: indium tin oxide (ITO, 50nm) / poly-(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS, 40nm) / P3HT:[6,6] - Phenyl C61-butyric acid methyl ester (PCBM): DBSQ (140nm) / LiF 1nm) / Al (200nm). The concentration of DBSQ in the photoactive zone varied from 0, 5% and 10% by weight. The relative ratio of P3HT:PCBM is 1:0.7. The P3HT:PCBM:DBSQ blend was dissolved in chlorobenzene at a concentration of 4.0% by weight and then spin-coated to a thickness of 140 nm on an ITO layer with a sheet resistivity of 10 Ω / square. After spin-coating, the P3HT:PCBM:DBSQ layer w...

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Abstract

Disclosed herein are organic photosensitive optoelectronic devices comprising two electrodes in superposed relation, a photoactive region located between the two electrodes, wherein the photoactive region comprises a donor mixture and an organic acceptor material, the donor mixture comprising at least one organic polymer donor material and at least one squaraine donor. Methods of fabricating the organic photosensitive optoelectronic devices are also disclosed.

Description

[0001] Cross References to Related Applications [0002] This application claims U.S. Provisional Application No. 61 / 712,783, filed October 11, 2012, U.S. Provisional Application No. 61 / 717,073, filed October 22, 2012, and U.S. Provisional Application No. 61 / 717,073, filed February 18, 2013. 61 / 766,098, all of which are hereby incorporated by reference in their entirety. [0003] Statement of Federally Funded Research [0004] This invention was made with United States Government support under Contract No. FA9550-10-1-0339 to the Air Force Office of Scientific Research. The government has certain rights in this invention. [0005] joint research agreement [0006] The subject matter of the present disclosure was done by, on behalf of, and / or in connection with a joint university-industry research agreement with one or more of the following parties: University of Michigan ) and Global Photonic Energy Corporation. The agreement was in effect on and before the date the su...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/00
CPCY02E10/549H01L51/4253H01L51/005H01L51/0036H01L51/0037H10K85/113H10K85/1135H10K85/60H10K30/30H10K30/50H10K30/20H10K2102/103H10K85/631
Inventor 史蒂芬·R·福里斯特李俊烨赵永珠陈炳斗
Owner RGT UNIV OF MICHIGAN
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