Novel Mask Removal Method Strategy for Vertical NAND Devices
A mask and substrate technology, applied in the field of mask material removal, can solve the problem of low removal rate
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Embodiment 1
[0050] Example 1 reference Figure 4 to Figure 8 . Fifteen SONOS substrates containing a boron-doped amorphous carbon mask layer were placed in the processing chamber, after which each substrate was processed using a plasma formed in the plasma generation chamber. The plasma used to treat the substrate includes O 2 、CF 4 and H 2 gas. To understand the effect of different processing conditions on the etch rates of boron-doped amorphous carbon (BDaC) layers, silicon nitride and silicon dioxide, the CF 4 The percentage of H is adjusted to 1%, 1.5% or 2% of the total gas volume, and the H 2 Percentage of Gas vs. CF 4 The gas percentage scale is adjusted to 0.5, 1, 2, 3 or 4. Then, the etching rate of the BDaC layer, the etching rate of silicon nitride, and the etching rate of silicon dioxide were measured. Next, BDaC selectivity to silicon nitride and BDaC selectivity to silicon dioxide were calculated for each process condition. The result is in Figure 4 to Figure 8 sh...
Embodiment 2
[0056] As shown in Example 1, while the plasma chemistry of the present disclosure can increase the BDaC etch rate, it can also cause etching of silicon nitride and silicon dioxide, possibly resulting in loss of Formation of pinholes or other defects in the substrate film. The effects of the preprocessing and postprocessing steps discussed above are in Figure 9 shown in . Specifically, O 2 / H 2 / CF 4 Gas mixture for 300 seconds; use O for substrates that have been treated with base / control and post-treatment gases 2 / H 2 / CF 4 The gas mixture was treated for 300 s, followed by N 2 / H 2 Gas mixture treatment for 60 seconds; use O for substrates treated with pretreatment gas and base / control gas 2 Process for 60 seconds, then use O 2 / H 2 / CF 4 The gas mixture was treated for 300 seconds; and O 2 Process for 30 seconds, use O 2 / H 2 / CF 4 Process for 300 seconds, and with N 2 / H 2 Process for 30 seconds. The number of pinholes found on each substrate (silicon...
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