Intelligent Power Module and Its Driving Circuit

Abstract

The invention discloses a driving circuit of an intelligent power module, which includes first to third synchronous level conversion circuits with the same circuit structure, and each synchronous level conversion circuit includes: a double pulse generation circuit; a first inverter; A first CMOS circuit; a first switch circuit, the first switch circuit includes a first DMOS transistor and a first transistor and a second transistor that are turned on and off synchronously with the first DMOS transistor; a second inverter; a second CMOS circuit; a second switch circuit, the second switch circuit includes a second DMOS transistor and a third transistor and a fourth transistor that are turned on and off synchronously with the second DMOS transistor; and an output circuit. The driving circuit can ensure that the DMOS transistor and the triode in the driving circuit are turned on synchronously, thereby effectively improving the service life and safety of the intelligent power module. The invention also discloses an intelligent power module.

Description

technical field [0001] The invention relates to the technical field of intelligent power modules, in particular to a driving circuit of an intelligent power module and an intelligent power module. Background technique [0002] Intelligent power module is a power drive product that combines power electronics and integrated circuit technology. The intelligent power module integrates the power switching device and the high-voltage driving circuit, and has fault detection circuits such as overvoltage, overcurrent and overheating. On the one hand, the intelligent power module receives a control signal from an MCU (Micro Control Unit, Micro Control Unit) to drive subsequent circuits to work; on the other hand, it sends the detected system status signal to the MCU. Compared with traditional discrete solutions, intelligent power modules have won an increasing market due to their advantages of high integration and high reliability. They are especially suitable for inverters and vari...

AI Technical Summary

Problems solved by technology

[0004] However, since the conduction time and conduction threshold of the high-voltage DMOS tube and the NMOS tube are not exactly the same, and the temperature characteristics of the two are not the same, therefore, in a certain temperature range, it is easy to have a significant difference in the conduction time of the two. Synchronization, so that the high-voltage DMOS tube and NMOS tube are subjected to instantaneous high pressure beyond their own load

For example, when the high-voltage DMOS tube lags behind the NMOS tube for a long time, it will seriously affect the service life of the drive circuit; damage, a safety hazard

Images