Polycrystalline silicon production method

A production method and polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of high cauliflower ratio on the surface of silicon rods and low success rate of furnace start-up

Active Publication Date: 2015-10-14
XINTE ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0026] Aiming at the above-mentioned deficiencies in the prior art, the present invention provides a polysilicon production method to solve the problems of low success rate of furnace start-up and high proportion of cauliflower on the surface of silicon rods

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0174] In 36 pairs of rod reduction furnaces, 21 nozzles are evenly distributed, and the diameter of each nozzle is 9mm. The initial temperature of the reduction furnace was set at 1130°C. In the initial feeding stage of the reduction furnace, the amount of trichlorosilane F TCS According to the following curve F TCS =150t+150(0≤t≤1) into the heat exchanger, preheat the hydrogen to 80°C, and pass the hydrogen into the heat exchanger according to the following flow rate: F H2 =0.0149*F TCS *R, where the molar ratio R of hydrogen and trichlorosilane flow is maintained at 4.30, and the mixed gas of hydrogen and trichlorosilane is exchanged with high-temperature water and reaction tail gas in the heat exchanger to 100°C Pass it into the reduction furnace to carry out the polysilicon deposition reaction, keep the temperature in the reduction furnace (1130°C) constant, and react for 1 hour.

[0175] In the operation stage of the reduction furnace, the amount of trichlorosilane m...

Embodiment 2

[0208] In the 36 pairs of rod reduction furnaces, 21 nozzles are evenly distributed, and the diameter of each nozzle is 9mm. The initial temperature of the reduction furnace was set at 1110°C. In the initial feeding stage of the reduction furnace, the amount of trichlorosilane F TCS According to the following curve F TCS =161.1t+138.9(0≤t≤1) into the heat exchanger, preheat the hydrogen to 80°C, and pass the hydrogen into the heat exchanger according to the following flow rate: F H2 =0.0149*F TCS*R, where the molar ratio R of hydrogen and trichlorosilane flow is maintained at 4.2, and the mixed gas of hydrogen and trichlorosilane is exchanged with high-temperature water and reaction tail gas in the heat exchanger to 100°C Pass it into the reduction furnace to carry out the polysilicon deposition reaction, keep the temperature in the reduction furnace (1110°C) constant, and react for 1 hour.

[0209] In the operation stage of the reduction furnace, the amount of trichlorosi...

Embodiment 3

[0238] In 36 pairs of rod reduction furnaces, 21 nozzles are evenly distributed, and the diameter of each nozzle is 9mm. The initial temperature of the reduction furnace was set at 1110°C. In the initial feeding stage of the reduction furnace, the amount of trichlorosilane F TCS According to the following curve F TCS =145t+10(0≤t≤2) into the heat exchanger, preheat the hydrogen to 80°C, and pass the hydrogen into the heat exchanger according to the following flow rate: F H2 =0.0149*F TCS *R, where the molar ratio R of hydrogen and trichlorosilane flow is maintained at 4.2, and the mixed gas of hydrogen and trichlorosilane is exchanged with high-temperature water and reaction tail gas in the heat exchanger to 100°C Pass it into the reduction furnace to carry out the polysilicon deposition reaction, keep the temperature in the reduction furnace (1110°C) constant, and react for 2 hours.

[0239] In the operation stage of the reduction furnace, the amount of trichlorosilane ma...

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Abstract

The invention provides a polycrystalline silicon production method. By changing the number of nozzles in a reducing furnace and optimizing and adjusting the technological parameters such as trichlorosilane quantity, molar ratio of hydrogen to trichlorosilane and temperature in the reducing furnace in the operation stage and the shutdown dropping stage of the reducing furnace, the silicon rod lodging is reduced, the success rate of furnace start is improved, the cauliflower rate on the silicon rod surface is reduced, and the product quality is improved; and the method requires small investment and is simple and easy to implement.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a polysilicon production method. Background technique [0002] At present, the polysilicon production process usually adopts the improved Siemens method, using a reduction furnace as a reaction vessel, mixing high-purity hydrogen and trichlorosilane, reacting at high temperature to form polysilicon, and depositing it on the silicon core carrier. After 3-7 days The deposition time grows into a polysilicon rod with a diameter of more than 100mm. Components such as trichlorosilane, silicon tetrachloride, dichlorodihydrosilane, hydrogen and hydrogen chloride contained in the reaction tail gas enter the dry separation and purification device for further separation, storage, and then recycling or subsequent treatment. [0003] In the existing polysilicon production process, the feed amount of trichlorosilane, the flow rate of hydrogen and trichlorosilane are respectivel...

Claims

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Application Information

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IPC IPC(8): C01B33/035
Inventor 王文梁国东杨勇其他发明人请求不公开姓名
Owner XINTE ENERGY
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