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Lithography system and method for patterning photoresist layers on euv masks

A photolithography system and photoresist layer technology, applied in the field of photolithography system, can solve problems such as invalid mask and performance impact

Active Publication Date: 2018-02-27
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, any defects in the mask may transfer to the chip, potentially adversely affecting performance
Severe enough defects can render the mask completely useless

Method used

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  • Lithography system and method for patterning photoresist layers on euv masks
  • Lithography system and method for patterning photoresist layers on euv masks
  • Lithography system and method for patterning photoresist layers on euv masks

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Embodiment Construction

[0032] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which the first component and the second component are formed in direct contact. An embodiment in which an additional component may be formed between such that the first component and the second component may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of simplicity and clarity and does n...

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Abstract

A lithography system for an extreme ultra violet (EUV) mask is provided. The lithography system includes a coupling module. The coupling module includes at least one mask contact element configured to touch a peripheral area of the EUV mask. The lithography system also includes an ammeter having an end electrically connected to the EUV mask through the at least one mask contact element and another end connected to a ground potential. The ammeter includes a sensor configured to measure a current conducting from the EUV mask to the ground potential and a compensation circuit configured to provide a compensation current that is opposite to the current measured by the sensor.

Description

technical field [0001] The present invention relates to lithographic systems and methods for patterning photoresist layers on EUV masks. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have produced several generations of ICs, each with smaller and more complex circuits than the previous generation. During the evolution of ICs, generally functional density (ie, the number of interconnected devices per chip area) has increased while geometry size (ie, the smallest component (or line) that can be created using a fabrication process) has decreased. Typically, this scaling down process provides benefits by increasing production efficiency and reducing associated costs. This scaling down process also increases the complexity of handling and manufacturing ICs, and similar developments in IC processing and manufacturing are required in order to achieve these adva...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027G03F7/20
CPCG03F1/22G03F1/46
Inventor 林云跃陈嘉仁李信昌严涛南
Owner TAIWAN SEMICON MFG CO LTD