Method for testing performance of stable thin film transistor sensor

Abstract

The invention relates to the technical field of electronic devices, and discloses a method for testing the performance of a stable thin film transistor sensor. Polarity-alternating pulse excitation is applied to a grid electrode of an electronic device of a thin film transistor structure, so as to eliminate hysteresis in a transistor transfer characteristic curve. The polarity of an applied alternating pulse signal is alternate, and the positive and negative voltage excitation can eliminate the charge accumulation of a grid dielectric layer or a trench sensitive layer of a constant polarity grid electrode under voltage bias, thereby eliminating hysteresis. When a sensor in a grid-control transistor structure is in use, the method provided by the invention can enable a background current to be more stable, and enables the measurement results to be more reliable and precise.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and electronic engineering, and in particular relates to a test and characterization method of electronic devices. Background technique [0002] At present, electronic devices are widely used in all aspects of life, especially sensors and other functional devices based on electronic devices of various structures, which have received continuous attention and universal application. Due to its remarkable features such as small size, low cost, simple structure, and the readout signal is an electrical quantity that can be directly connected to a circuit for digital processing, it is widely used in environmental monitoring, medical monitoring, disease diagnosis, inspection and quarantine, food, etc. Engineering inspection, Internet of Things, smart home, smart city, national defense industry and many other major areas related to the national economy and people's livelihood. Commonly used senso...

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Problems solved by technology

Then, in the process of sensor application, under a certain gate bias, the device will show current instability. During the entire test process, although the gate voltage remains unchanged, the baseline of the channel current has been drifting, which may continue. Increases may also continue to decrease, and may even be erratic

Because the sensing value is realized by the difference between the current of the device exposed to the object under test and the background current, if the background current is unstable, the test accuracy of the sensor cannot be guaranteed, and the sensor may even fail

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