A micro-cantilever resonant structure sensor and its manufacturing method
A resonant structure and manufacturing method technology, applied in the field of micro-nano sensors, can solve the problem that the step of fixing sensitive materials cannot be mass-produced, and achieve the effects of easy on-chip integration, miniaturization, and low manufacturing cost
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Embodiment 1
[0070] The invention provides a method for manufacturing a micro-cantilever resonant structure sensor, please refer to figure 1 , is shown as a process flow chart of the method, comprising the steps:
[0071] S1: A substrate is provided, and a micro-cantilever structure is formed in the substrate; the micro-cantilever structure includes a cavity formed in the substrate and a micro-cantilever beam located above the cavity; the micro-cantilever One end of the beam is fixed and the other end is free; a hydrophilic layer is formed on the surface of the micro-cantilever;
[0072] S2: forming a protective layer on the surface of the sensitive area of the micro-cantilever;
[0073] S3: forming a hydrophobic molecular layer on the surface of the substrate;
[0074] S4: removing the protective layer to expose the hydrophilic layer underneath; during the process of removing the protective layer, the hydrophobic molecular layer on the surface of the protective layer is also removed, ...
Embodiment 2
[0109] The present invention also provides a micro-cantilever resonant structure sensor manufactured by the manufacturing method in the first embodiment.
Embodiment 3
[0111] The monoclonal antibody of diarrhea-causing Escherichia coli O157:H7 is used as a sensitive material to form an integrated resonant microcantilever resonant structure E. coli sensor. The previous steps of the preparation method of the integrated resonant microcantilever resonant structure E. coli sensor can refer to the description of steps S1 and S2 in Example 1, and the following steps are as follows:
[0112] Step S3: using a chemical vapor deposition process to self-organize and grow multiple FAS-17 amphiphobic molecular layers on the entire silicon wafer; and use 30% H 2 o 2 Wet removal of the Ti protective layer at 65 °C to expose the underlying SiO 2 surface or Al pad, while the rest of the FAS-17 molecular layer is not affected;
[0113] Step S4: immerse the silicon wafer in a 5% volume fraction of 3-aminopropyltriethoxysilane (APTES) ethanol solution and place it in a 37°C water bath constant temperature oscillator for 2 hours; after the reaction is completed...
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