A Method for Reducing the Damage of Substrate Material by High Energy Ion Bombardment

Abstract

The invention relates to a method for reducing the damage of a substrate material by high-energy ion bombardment, which belongs to the field of plasma etching. The method includes setting a pulse modulation signal in advance, the pulse rising edge time t, t is less than D×T (D is the duty cycle of the pulse, T is the period of the pulse); and then using this signal as the modulation signal to bias the radio frequency The power source performs pulse modulation to obtain a radio frequency modulation power with a rising edge of t. Compared with the existing technology, the present invention can reduce the damage caused by the high-energy ion bombardment material at the initial stage of pulse modulation substrate bias voltage, protect the safety of the substrate material in the etching process, and make the etching device obtain better performance. At the same time, according to different bias parameters required by etching, an appropriate value of t can be selected, so that it can be applied to the etching requirements of various substrate materials. At the same time, it can also be combined with the discharge modes of different coil radio frequency power sources, so that it can adapt to different plasma discharge conditions.

Description

technical field [0001] The invention relates to a method for reducing the damage of a substrate material by high-energy ion bombardment, which belongs to the field of plasma etching. Background technique [0002] Plasma etching uses radio frequency discharge to decompose or ionize the reactive gas in the chamber to generate active particles, such as atoms, ions or free radicals, which diffuse to the etching part of the substrate and interact with the substrate material. reaction to obtain the desired pattern on the substrate. Plasma etching is widely used in material processing because of its advantages of fast etching rate and good etching pattern. [0003] At present, low-temperature plasma processing technology is a very important part of semiconductor production, especially in the manufacturing process of ultra-large-scale integrated circuits, nearly one-third of the processes need to be completed with the help of plasma technology, such as plasma thin film deposition ...

AI Technical Summary

Problems solved by technology

This method should solve the problem that in the field of deep silicon etching, the advantages of reducing the deformation of the etching morphology and reducing the material damage caused by high-energy ions cannot be achieved after the pulse modulation of the substrate bias power, so that it can be used during the etching process. Precisely control the etched topography of materials and preserve the safety of materials

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