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A silicon-based nanowire polarizing beam splitter based on the principle of mode evolution

A silicon-based nanometer and linear polarization technology, applied in the field of integrated optics, can solve the problems of limited working bandwidth of the device, reduce the length of the device, and long the length of the device, and achieve the effects of easy coupling, reduced coupling length, and large working bandwidth.

Active Publication Date: 2018-03-20
SOUTHEAST UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the directional coupler based on the principle of mode coupling has become the preferred structure for designing polarization beam splitters because of its simple structure and easy implementation. There are strict requirements on the size of the device, which puts forward higher precision requirements for the manufacture of the device; at the same time, the working bandwidth of the device is also limited
For this reason, the principle of mode evolution is proposed for the design of polarization beam splitters, but the length of the obtained device is longer (about an order of magnitude longer than the structure based on the principle of mode coupling), so it is necessary to ensure a large operating bandwidth on the basis of A new structure is adopted to effectively reduce its device length

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  • A silicon-based nanowire polarizing beam splitter based on the principle of mode evolution
  • A silicon-based nanowire polarizing beam splitter based on the principle of mode evolution

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Embodiment Construction

[0016] The present invention will be further explained below in conjunction with the accompanying drawings.

[0017] Such as figure 1 As shown, a silicon-based nanowire polarization beam splitter based on the mode evolution principle of the present invention includes an input waveguide 1, a tapered transition waveguide 2, a vertical hybrid plasmonic waveguide 3, a horizontal hybrid plasmonic waveguide 4, and a first S-curve Type waveguide 5, the second S-curved waveguide 6, the first output waveguide 7, the second output waveguide 8; wherein the vertical hybrid plasma waveguide 3 and the horizontal hybrid plasma waveguide 4 are respectively located on both sides of the tapered transition waveguide 2, and The pitch of the tapered transition waveguide 2 is consistent; the lower end of the tapered transition waveguide 2 is connected to the input waveguide 1, and the upper end of the vertical hybrid plasma waveguide 3 is connected to the first S-curved waveguide 5, and the first S...

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Abstract

The invention discloses a silicon-based nanowire polarization beam splitter based on the mode evolution principle, and can be used for the fields of integrated optics and silicon-based photonics. A vertical hybrid plasma waveguide (3) and a horizontal hybrid plasma waveguide (4) are respectively arranged at the two sides of a tapered transitional waveguide (2), and distance to the tapered transitional waveguide (2) is maintained to be consistent. An input waveguide (1) is connected at the lower end of the tapered transitional waveguide (2). A first S-shaped waveguide (5) is connected at the upper end of the vertical hybrid plasma waveguide (3). A first output waveguide (7) is connected at the upper end of the first S-shaped waveguide (5). A second S-shaped waveguide (6) is connected at the upper end of the horizontal hybrid plasma waveguide (4). A second output waveguide (8) is connected at the upper end of the second S-shaped waveguide (6). The device has advantages of being high in polarization beam splitting efficiency, low in loss, high in manufacturing tolerance and high in work bandwidth, and can also be used for constructing an on-chip polarization diversity scheme so as to realize polarization independent transmission.

Description

technical field [0001] The invention relates to the technical field of integrated optics, in particular to a silicon-based nanowire polarization beam splitter based on the principle of mode evolution. Background technique [0002] Silicon photonic integrated circuit technology based on silicon-on-insulator (SOI) material platform has attracted extensive attention of researchers in recent years. With the help of the high refractive index difference and CMOS compatibility of SOI materials, many compact photonic devices and systems can be mass-produced at low cost, but the inherent high refractive index difference of SOI materials will inevitably introduce strong polarization dependence. This greatly limits its application in on-chip optical communication. To this end, efficient on-chip polarization diversity schemes are proposed, and polarization beam splitters and rotators are two important components. At present, researchers have proposed a variety of waveguide structures ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/126
CPCG02B6/126
Inventor 肖金标徐银
Owner SOUTHEAST UNIV
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