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Semiconductor device and related programming method

A semiconductor and storage technology, applied in semiconductor devices, electric solid-state devices, digital memory information, etc., can solve the problems of being expensive and not suitable for increasing the number of bits per unit unit

Active Publication Date: 2020-06-23
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, patterning techniques for fine patterns can be relatively expensive, and MLC techniques can be unsuitable for increasing the number of bits per unit cell

Method used

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  • Semiconductor device and related programming method
  • Semiconductor device and related programming method
  • Semiconductor device and related programming method

Examples

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Embodiment Construction

[0028] Example embodiments are described below with reference to the drawings. There can be many different forms and embodiments without departing from the spirit and teachings of the present disclosure, so the present disclosure should not be construed as being limited to the example embodiments set forth herein. On the contrary, these example embodiments are provided so that this disclosure will be thorough and complete, and will convey the scope of the disclosure to those skilled in the art. In the drawings, the size and relative size of layers and regions may be exaggerated for clarity. The same reference numerals denote the same elements throughout the description.

[0029] The terms used herein are only for the purpose of describing specific embodiments, and are not intended to limit the embodiments. Unless the context clearly dictates otherwise, the singular forms "a", "an" and "this" as used herein are intended to also include the plural forms. It will also be understo...

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Abstract

Provided are a semiconductor device and a related programming method. The semiconductor device includes a peripheral circuit area and a first storage area arranged side by side on a substrate. Also, the semiconductor device includes a second storage area on the peripheral circuit area and the first storage area.

Description

[0001] This patent application claims the priority of Korean patent application No. 10-2014-0061018 filed at the Korean Intellectual Property Office on May 21, 2014, and the disclosure of the Korean patent application is incorporated herein by reference in its entirety. Technical field [0002] The present disclosure relates to a semiconductor device and a method of programming the semiconductor device. Background technique [0003] Three-dimensional integrated circuit (3D-IC) storage technology has been developed to increase the storage capacity of semiconductor storage devices. 3D-IC storage technology includes various methods for arranging storage cells three-dimensionally. In addition to 3D-IC storage technology, patterning technology for fine patterns and multi-layer cell (MLC) technology may be used to increase the storage capacity of semiconductor memory devices. However, the patterning technology for fine patterns may be relatively expensive, and the MLC technology may no...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56G11C16/10H10B41/35H10B43/27
CPCH01L27/0688G11C5/025G11C11/56G11C11/5628G11C16/0483G11C16/10G11C2211/5641H01L25/18H10B41/35H10B43/27
Inventor 任峻成尹壮根赵厚成
Owner SAMSUNG ELECTRONICS CO LTD
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