A method for controlling the precise positioning and growth of silicon nanowires with micron copper patterns

Abstract

The present invention provides a method for controlling the precise positioning and growth of silicon nanowires with micron copper patterns. The method includes the steps of: firstly, providing a substrate, including a silicon base and a top insulating layer on the silicon base; Make a micron copper pattern array on the surface of the top insulating layer; finally, perform annealing treatment, the micron copper pattern array is consumed during the annealing process, and at the same time control the growth of silicon nanowires to pass through the top insulating layer and precisely position on the micron location of the copper pattern array. In the invention, a micro-copper pattern array is fabricated on a silicon oxide insulating layer supported by a silicon substrate through a microelectronic processing technology, and then annealed in argon and hydrogen atmospheres, and silicon nanowires are precisely positioned and grown on the micro-copper pattern array. The method is simple in process, high in efficiency and small in structure volume, and is compatible with CMOS process so that it has better expansibility, and has broad application prospects in the fields of microelectronics, biological detection and solar cells.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation and application, and relates to a method for positioning and growing silicon nanowires, in particular to a method for controlling the precise positioning and growing of silicon nanowires with micron copper patterns. Background technique [0002] Silicon nanowires and amorphous silicon nanowires have broad application prospects in the fields of microelectronics, biological detection and solar cells. The manufacturing method of silicon nanowires or amorphous silicon nanowires with low cost, mass production and good stability is a necessary condition for realizing its application in the fields of microelectronics, biological detection and solar cells. To facilitate the application of silicon nanowires or amorphous silicon nanowires, it is particularly important to control the growth position of nanowires, which has very important practical application value. Currently, there are two...

AI Technical Summary

Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for controlling the precise positioning and growth of silicon nanowires with micron copper patterns, which is used to solve the problem of the positioning and growth of silicon nanowires, and realize the existing technology and CMOS technology at the same time. Compatible, does not use any gas silicon source, can effectively reduce the complexity of the manufacturing process, control cost increases, and avoid environmental pollution and other issues

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