Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Photodetection Sensor Compatible with Silicon Bipolar Process

A photodetector and bipolar process technology, applied in the direction of electric solid-state devices, circuits, electrical components, etc., to achieve the effect of not affecting quantum efficiency, fast response speed, and large driving ability

Inactive Publication Date: 2017-08-11
陆川县嘉兴电子厂
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The existing technologies listed above are all compatible with the silicon photodetector and the MOS integrated circuit process, but the prior art still lacks the silicon photodetector and another integrated circuit process, which is also the most mature silicon bipolar circuit. Process compatible technical solutions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Photodetection Sensor Compatible with Silicon Bipolar Process
  • A Photodetection Sensor Compatible with Silicon Bipolar Process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0032] When designing a photodetector, several technical indicators such as its noise, quantum efficiency, and responsivity are mainly considered.

[0033] In order to introduce the specific design of the present invention in detail. We firstly describe the overall structure of the present invention, and then explain some specific structures of the sensor of the present invention in combination with the performance parameter design of the photoelectric detection sensor.

[0034] One, overall structure of the present invention.

[0035] Such as figure 1 As shown, a photodetection sensor compatible with the silicon bipolar process includes a first photodetector 1 and a second photodetector 2; the first photodetector 1 and the second photodetector 2 have the same structure, and both Manufactured by silicon bipolar integrated circuit technology...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a photoelectric detection sensor compatible with silicon bipolar process. The photoelectric detection sensor includes a first photoelectric detector and a second photoelectric detector; the first photoelectric detector comprises a first device region; the first device region of the first photoelectric detector is formed by the collector region of an NPN transistor; M second device regions of the first photoelectric detector are produced in the first device region of the first photoelectric detector, wherein M is a natural number smaller than 10; the second device regions of the first photoelectric detector are formed by the base region of the NPN transistor; the structure of the second photoelectric detector is identical to the structure of the first photoelectric detector; and the surface of the second photoelectric detector is coated with an aluminum film. The photoelectric detection sensor has the advantages of high quantum efficiency and high response speed.

Description

technical field [0001] The invention relates to a photoelectric detection sensor, in particular to a photoelectric detection sensor compatible with silicon bipolar technology. Background technique [0002] The basic function of the photodetection sensor is to convert the light power incident on the detector into the corresponding photocurrent. Its performance is directly related to the accuracy of the receiving processing circuit. Therefore, only the selection and design of a suitable photodetector will not weaken the performance of the receiving processing circuit. [0003] When designing, the main considerations are several technical indicators such as photodetector noise, quantum efficiency, and responsivity. [0004] In many application fields, such as the output part of the optocoupler, it is often necessary to integrate the photodetector and signal processing on the same single chip, that is, to realize the process compatibility between the photodetector and the sign...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/144H01L27/102
CPCH01L27/1022H01L27/1443H01L27/1446
Inventor 尹洪剑
Owner 陆川县嘉兴电子厂
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com