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Electroplating method

A technology of electroplating layer and seed layer, applied in the field of electroplating, can solve the problem of easy existence of holes, and achieve the effect of reducing the discontinuity of the electroplating layer

Inactive Publication Date: 2015-12-09
WUXI WEISHUN METAL PROD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it has been found in actual production that after the above-mentioned annealing operation, holes are likely to exist in the formed interconnection metal layer, especially for thicker interconnection metal layers (such as thickness exceeding 3 microns).

Method used

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  • Electroplating method

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Embodiment Construction

[0016] Combine below figure 1 The technical solutions of the present invention are further described through specific implementation methods.

[0017] figure 1 It is a flow chart of an electroplating method provided by a specific embodiment of the present invention.

[0018] A method of electroplating, comprising:

[0019] Step a, determining the thickness of the electroplating layer and providing a substrate, and a seed layer is formed on the surface of the substrate;

[0020] Step b, putting the substrate with the seed layer into a liquid tank with a pH value of 5-9, using the seed layer as an anode, and performing an electrolysis operation;

[0021] Step c, sequentially performing at least two electroplating layered operations on the seed layer and annealing operations placed after the operations of forming the electroplating layers, the sum of the thicknesses of each of the electroplating layers is equal to the electroplating layer thickness.

[0022] In this embodime...

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Abstract

The invention relates to the electroplating field, and especially relates to an electroplating method. The method comprises the following steps: determining the thickness of an electroplating layer, and providing a substrate, wherein a crystal seed layer is formed on the surface of the substrate; putting the substrate with the crystal seed layer in a liquid tank with the liquid having a pH value of 5-9, and executing an electrolysis operation; and sequentially carrying out at least two layer layering electroplating on the crystal seed layer, and annealing after the formation of every electroplated layer. An electroplated layer formation step is decomposed into the layering electroplating step of at least two layers, so stress is released in steps at step interval between the layering electroplating processes, thereby the electroplated layers have few holes; and additionally, the electrolysis step removes particles attached to the crystal seed layer in the time interval between formation of the crystal seed layer and the electroplating process, so discontinuousness of the electroplated layers due to the existence of the particles and the electroplating hole phenomenon caused by the discontinuousness are reduced.

Description

technical field [0001] The invention relates to the field of electroplating, in particular to an electroplating method. Background technique [0002] In the traditional process, an electroplating process is usually used to form the interconnection metal layer (such as copper) between the device and the external circuit. The steps of performing the electroplating operation using the traditional process include: determining the thickness of the electroplating layer and providing a base; the surface of the base is formed with a seed crystal layer; forming an electroplating layer on the seed layer. [0003] In order to improve the effects of subsequent chemical mechanical polishing (CMP), wafer acceptability testing (WAT) and reliability testing, an annealing operation is usually performed after the electroplating layer is formed: the annealing temperature is 200 degrees Celsius, and the annealing duration is 90 seconds. However, it is found in actual production that after the ...

Claims

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Application Information

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IPC IPC(8): C25D5/10C25D5/50C25D5/34
Inventor 李辉
Owner WUXI WEISHUN METAL PROD
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