Marking method for TEM chip sample

Abstract

The invention provides a marking method for a TEM chip sample. The portion, 0.2 micrometer-0.3 micrometer away from an object region, of the chip sample is damaged with a TEM to form an amorphous ring, and the radius of the amorphous ring is smaller than the distance between the amorphous ring and the object region. According to the marking method for the TEM chip sample, the portion nearby the object region needing to be observed with the transmission electron microscope is damaged, due to the fact that electron beams in the TEM are used, the position and radius of the amorphous ring formed by the damages can be precisely controlled, the accidental damage rate of the object region can be decreased, and a damage marker can be formed at the position under the object region, so that when the TEM chip sample is observed and analyzed with the transmission electron microscope, the object region needing to be observed and analyzed can be immediately found out, the time wasted for searching the object region is shortened when the TEM chip sample is observed and analyzed, and the working efficiency is improved.

Description

technical field [0001] The invention relates to the field of observing chip samples with a transmission electron microscope, in particular to a marking method for TEM chip samples. Background technique [0002] Transmission Electron Microscope (TEM for short), referred to as TEM, is to project the accelerated and concentrated electron beam onto a very thin sample, and the electrons collide with the ions in the sample to change the direction, resulting in solid angle scattering, scattering angle The size of the sample is related to the density and thickness of the sample, so images with different light and shade can be formed, and the images will be displayed on imaging devices (such as fluorescent screens, films or photosensitive coupling components) after zooming in and focusing. Nowadays, transmission electron microscopy is widely and increasingly important in various fields including integrated circuit analysis, and FIB (Focused Ion Beam, Focused Ion Beam) sample preparat...

AI Technical Summary

Problems solved by technology

However, for certain small-sized repeat unit structures, such as figure 2 As shown, there are multiple repeating unit structures 1 including the target unit on the TEM sample. For example, each unit structure 1 is a tiny repeating unit such as a polysilicon gate or a metal lead, and each tiny repeating unit is The structure, size and color need to be made exactly the same and arranged side by side on the silicon substrate 2, thus forming several repeated unit structures 1, except for the sample preparation personnel, other TEM operators cannot confirm the position of the target unit

If a TEM sample needs to be observed again, and the TEM operator is not the sample preparation person, or even the sample preparation person does not remember the relative position of the target unit or the target area, there will be problems and the operation cannot be performed

[0004] Therefore, in view of the above-mentioned defects, it is necessary to invent a marking method for TEM chip samples, reduce the time wasted when looking for the target area when observing and analyzing TEM chip samples, and improve work efficiency

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