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Complementary metal oxide semiconductor (CMOS)-based high-response working method for terahertz sensor

A working method, terahertz technology, applied to radiation control devices, etc., can solve the problems of increased production cost and manufacturing difficulty, achieve low noise equivalent power, reduce noise equivalent power, and increase voltage response

Active Publication Date: 2015-12-09
NANJING UNIV
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, all the above-mentioned methods involve the introduction of new processes and new structures, which will increase the production cost and manufacturing difficulty. Therefore, it is very meaningful to find a method that can improve the performance of the detector without changing the device structure and manufacturing process.

Method used

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  • Complementary metal oxide semiconductor (CMOS)-based high-response working method for terahertz sensor
  • Complementary metal oxide semiconductor (CMOS)-based high-response working method for terahertz sensor
  • Complementary metal oxide semiconductor (CMOS)-based high-response working method for terahertz sensor

Examples

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Embodiment Construction

[0030] The proposed scheme will be described in detail below in conjunction with the accompanying drawings.

[0031] In this example, a standard 0.18μm semiconductor process is used to manufacture a terahertz sensor, in which the transistor size is 0.18μm×1μm, and a 650GHz antenna is integrated to collect terahertz signals. We first let this terahertz sensor work in conventional mode. Such as figure 1 As shown, a DC bias voltage V is applied to the gate (101) gs, the terahertz signal collected by the antenna is input from the source terminal (102), the drain terminal (103) is floating, and is connected with a lock-in amplifier to output a voltage. image 3 The middle black curve represents the voltage response and DC bias V of the terahertz sensor in this example in the traditional working mode gs It can be seen that the maximum response voltage at this time is about 50μV.

[0032] Then we let the same terahertz sensor work in the novel working mode proposed by the present...

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Abstract

The invention relates to a complementary metal oxide semiconductor (CMOS)-based high-response working method for a terahertz sensor. When a metal-oxide-semiconductor filed effect transistor (MOSFET) is working, an external circuit is used for providing a stable driving current for a source end and a drain end of a device so as to change direct-current conductance of a channel; and a direct-current bias voltage V<gs> is applied to a grid (201) of an MOSEFT device, a terahertz signal is input from the source end (202), and the drain end (203) is connected with a stable current source (204) to output a voltage. In such working mode, the channel direct-current conductance (GDS) of the channel current is changed, thus, the voltage response (RV) of a CMOS terahertz signal sensor can be larger, and the noise equivalent power (NEP) is lower.

Description

technical field [0001] The present invention relates to a sensor based on CMOS terahertz signals, and more to a new working mode of the sensor, which can significantly improve its response to terahertz signals and reduce noise equivalent power (NEP). Background technique [0002] Terahertz is an electromagnetic wave with a frequency between microwave and infrared, which has many special properties: photon energy is small, no harm to matter; it can easily penetrate non-metallic and non-polar materials such as ceramics; terahertz wave has high frequency information The carrying capacity is much larger than that of microwaves. Therefore, terahertz detection technology has important application prospects in broadband communication, radar, medical imaging, non-destructive testing, security inspection and other fields. Among the current terahertz detectors, terahertz detectors based on integrated circuit technology and using MOSFETs as sensors have outstanding advantages such as ...

Claims

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Application Information

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IPC IPC(8): H01L27/144
Inventor 纪小丽廖轶明吴福伟闫锋
Owner NANJING UNIV
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