A terahertz detector based on a non-self-aligned cmos structure
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- NANJING UNIV
- Publication Date
- 2018-03-13
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Abstract
Description
technical field
[0001] The invention relates to the fields of terahertz detectors and MOSFETs, in particular to a MOSFET structure using a non-self-aligned CMOS process, which can effectively improve the performance of terahertz detectors. Background technique
[0002] Terahertz is an electromagnetic wave with a frequency between infrared and microwave. Due to the high spatial and temporal resolution of terahertz, terahertz imaging technology has become one of the current research hotspots. At the same time, many non-metallic polar materials have little absorption of terahertz rays, so they can detect the internal information of the material. In addition, the terahertz electromagnetic energy is small and will not damage the material, and the resonance frequency of the vibration and rotation frequency of biomolecules is in the Therefore, terahertz has broad application prospects in the fields of security inspection and medical imaging.
[0003] Terahertz detector is one of ...