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Rapid determining and machining method of a-direction plain edge of c-direction sapphire ingot

A processing method and sapphire technology, applied in the direction of stone processing equipment, fine working devices, working accessories, etc., can solve the problems of low detection process efficiency, long detection time, cumbersome process, etc., to shorten the processing time, reduce The effect of simple manufacturing cost and processing technology

Active Publication Date: 2015-12-23
HARBIN AURORA OPTOELECTRONICS TECH
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AI Technical Summary

Problems solved by technology

This method of determining the flat edge has a cumbersome process, and it needs to carry out the detection of the a direction and the r direction successively, and the corresponding parts of the XRD diffractometer must be adjusted before each detection, the detection process is inefficient and the detection time is long

Method used

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  • Rapid determining and machining method of a-direction plain edge of c-direction sapphire ingot
  • Rapid determining and machining method of a-direction plain edge of c-direction sapphire ingot
  • Rapid determining and machining method of a-direction plain edge of c-direction sapphire ingot

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0026] figure 1 It is a schematic diagram of the projection of each crystal plane in the sapphire crystal on the c plane. When the detected r plane is r1 in the figure, the flat side a plane with a special positional relationship with the r direction is figure 1 The plane where the left and right sides perpendicular to the marked a direction are located.

[0027] to combine figure 2 , the embodiment of the present invention provides a method for quickly determining and processing the a-direction flat edge of the c-direction sapphire crystal rod. The technological process of described method com...

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Abstract

The invention provides a rapid determining and machining method of the a-direction plain edge of a c-direction sapphire ingot to mainly machine the sapphire ingot plain edge with the special requirement for the r-direction and plain edge position. An auxiliary device is installed on an XRD instrument, firstly, one r direction is found, the corresponding position is marked on the sapphire ingot, then the a-direction crystal face position perpendicular to the corresponding position of the sapphire ingot is marked, and finally one direction is selected according to the requirement to carry out a-direction plain edge machining. According to the rapid determining and machining method, the operation step is simplified, and operation is easier. The machining period can be effectively shortened while it is guaranteed that the machined sapphire ingot has the same r-direction position. The later machining yield can be obviously increased, and accordingly the production and manufacture cost of a sapphire wafer is reduced.

Description

(1) Technical field [0001] The invention relates to the technical field of sapphire crystal ingot processing, in particular to a rapid determination and processing method for a sapphire ingot in which the r direction and the flat edge positions are changed from the specially required c direction to the a direction of the flat edge. (2) Background technology [0002] Sapphire (Sapphire, also known as white gem, the molecular formula is Al 2 o 3 ) Single crystal is a widely used substrate material, and it is the preferred substrate for the current blue, violet and white light-emitting diode (LED) and blue laser (LD) industries (need to first epitaxial gallium nitride film on the sapphire substrate), It is also an important superconducting thin film substrate. [0003] Sapphire single crystal is a typical anisotropic crystal, and the crystal properties are different in different directions, so sapphire materials with different crystal directions have different uses. The most...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/00B28D7/00
Inventor 左洪波杨鑫宏张学军袁志勇
Owner HARBIN AURORA OPTOELECTRONICS TECH
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