Thermal field for improving growth of zone-melting silicon and single crystal silicon
A technology of single crystal silicon and zone melting silicon, which is applied in the direction of single crystal growth, crystal growth, self-zone melting method, etc., can solve the problem of high requirements on the surface smoothness and roundness of polycrystalline materials, and the effect is not very good And other issues
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[0025] Pulling 4-inch single crystal, the diameter of the polycrystalline material is 114-119, with a diameter difference of 5mm, and there are pits on the surface of the material.
[0026] use as figure 1 and 2 In the thermal field described above, the single crystal expands to 50°, and the polycrystalline material begins to produce thorns; continue to expand normally, and the material is turned 90 degrees (upward rotation 0.4r / min), and the silicon thorns melt until the diameter of the single crystal is 70, and the upper Silicon thorns no longer appear in the material.
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